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Publications

Found 57 results
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S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”, Solid-State Electronics, vol. 137, pp. 117–122, 2017.
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E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , “Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study”, Phys. Rev. B, vol. 64, p. 155204, 2001.
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K. Maitra and Bhat, N. , “Impact of Gate to Source/Drain Overlap Length on 80 nm CMOS Circuit Performance”, IEEE Transactions on Electron Devices, pp. 409–414, 2004.
K. Majumdar, V.R., K. , Murali, M. , Bhat, N. , and Lin, Y. - M. , “Intrinsic limits of subthreshold slope in biased bilayer graphene transistor”, Applied Physics Letters, vol. 96, p. 123504, 2010.
A. N. Mallya and Ramamurthy, P. C. , “Investigation of selective sensing of a diamine for aldehyde by experimental and simulation studies”, Analyst, vol. 139, pp. 6456–6466, 2014.
P. Mandal, Chopra, V. , and Ghosh, A. , “Independent Direction Control of Magnetic Nanomotors”, ACS Nano, vol. 9, 2015.
B. Medhi, Hegde, G. M. , Gorthi, S. Siva, Reddy, K. Jagannath, Roy, D. , and Vasu, R. Mohan, “Improved quantitative visualization of hypervelocity flow through wavefront estimation based on shadow casting of sinusoidal gratings”, Applied optics, vol. 55, pp. 6060–6071, 2016.
A. Sankar Medury, Bhat, K. N. , and Bhat, N. , “Impact of carrier quantum confinement on the short channel effects of double-gate silicon-on-insulator FINFETs”, Microelectronics Journal, vol. 55, pp. 143–151, 2016.
V. Mishra, Ananthasuresh, G. K. , Bhat, N. , Nageswari, K. , Contractor, A. Q. , Kottantharayil, A. , Jamadagni, H. S. , Mohan, S. , Murthy, T. , Pratap, R. , Pinto, R. , Rao, V. R. , Vasi, J. M. , Shivashankar, S. A. , Venkataraman, V. , and Vinoy, K. J. , “Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India”, in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-5.
N. Mohan, , , Soman, R. , and Raghavan, S. , “Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes”, Journal of Applied Physics, vol. 118, p. 135302, 2015.
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D. R. Nayak, Bhat, N. , Venkatapathi, M. , and Umapathy, S. , “Impact of ultrathin dielectric spacers on SERS: energy transfer between polarized charges and plasmons”, Journal of Materials Chemistry C, vol. 5, pp. 2123–2129, 2017.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , “Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics”, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
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A. Pandey and Selvaraja, S. Kumar, “Internally-loaded ring resonator configuration for optical filter applications”, CSI transactions on ICT, vol. 5, pp. 135–141, 2017.
A. Kumar Pandey, Pratap, R. , and Chau, F. Siong, “Influence of Boundary Conditions on the Dynamic Characteristics of Squeeze Films in MEMS Devices”, IEEE/ASME Journal of MEMS, vol. 16, pp. 893–903, 2007.
A. Paramanick, Roy, K. , Samanta, D. , Aiswarya, K. S. , Pratap, R. , and M Singh, S. , “Image quality enhancement of PMUT-based photoacoustic imaging”, in Photons Plus Ultrasound: Imaging and Sensing 2023, 2023.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , “Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
G. R. Prashanth, Murali, P. , Varma, M. M. , and Bhat, N. , “In-situ impedance spectroscopy of layer-by-layer self-assembly of polyelectrolytes”, in Emerging Electronics (ICEE), 2012 International Conference on, 2012, pp. 1-4.
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S. Raghavan and Redwing, J. M. , “Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”, Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
S. Raghavan and Redwing, J. M. , “In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates”, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.
A. Raman and Ananthasuresh, G. K. , “Improving a Dual-Probe Heat Pulse based soil moisture sensor using insulated nichrome wire”, in Physics and Technology of Sensors (ISPTS), 2015 2nd International Symposium on, 2015, pp. 283-288.
M. Ramanathan and Pratap, R. , “Integration of a Compliant Thermal Actuator for Unlatching in a Mems Latch Accelerometer”, in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , “Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”, Journal of Applied Physics, vol. 127, p. 215705, 2020.
D. Roy, Sreenivasulu, K. V. , and Kumar, P. S. A. , “Investigation on non-exchange spring behaviour and exchange spring behaviour: A First Order Reversal Curve Analysis”, Appl. Phys. Lett., vol. 103, p. 222406, 2013.
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R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , “Integrated X-Band Inductor With a Nanoferrite Film Core”, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
K. Sandeep Sharma, Jen, H. - T. , Li, S. - S. , and Pillai, G. , “Investigation of support transducer enabled higher-order radial bulk mode MEMS resonator and low phase noise oscillator”, Journal of Micromechanics and Microengineering, vol. 32, p. 084004, 2022.

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