Journal Article
V. Mere, Kallega, R. , and Selvaraja, S. Kumar,
“Efficient and tunable strip-to-slot fundamental mode coupling”,
Optics express, vol. 26, pp. 438–444, 2018.
S. Talukdar, Kumar, P. , and Pratap, R. ,
“Electric Current Induced Mass Flow in Very Thin Infinite Metallic Films”,
IEEE Transactions on Electron Devices, vol. 60, pp. 2877-2883, 2013.
V. Shastri, Majumder, S. , Ashok, A. , Roy, K. , Pratap, R. , and Kumar, P. ,
“Electric current-assisted manipulation of liquid metals using a stylus at micro-and nano-scales”,
Nanotechnology, 2022.
S. Kumar, Suresh, H. , Sethuraman, V. A. , Kumar, P. , and Pratap, R. ,
“Electric field induced patterning in Cr film under ambient conditions: A chemical reaction based perspective”,
SN Applied Sciences, vol. 2, pp. 1–9, 2020.
M. Esposto, Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , Hung, T. - H. , and Rajan, S. ,
“Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride”,
Applied Physics Letters, vol. 99, p. 133503, 2011.
S. M. Mohanasundaram, Pratap, R. , and Ghosh, A. ,
“Electromigration: A Unique Tool for Microstructure Engineering in Metal Films”,
International Journal of Applied Physics and Mathematics, vol. 2, pp. 2426-2431, 2012.
P. Sung Park, Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. ,
“Electron Gas Dimensionality Engineering in AlGaN/GaN HEMTs using Polarization”,
Applied Physics Letters, vol. 100, p. 063507, 2012.
D. V. Sridhar Rao, Jain, A. , Lamba, S. , Muraleedharan, K. , and Muralidharan, R. ,
“Electron microscopy investigations of purity of AlN interlayer in AlxGa1?xN/GaN heterostructures grown by plasma assisted molecular beam epitaxy”,
Appl. Phys. Lett, vol. 102, 2013.
D. N. Nath, Hsieh, E. , Keller, S. , DenBaars, S. , Mishra, U. K. , and Rajan, S. ,
“Electron Transport in Vicinal N-polar AlGaN/GaN heterostructures”,
Applied Physics Letters, vol. 97, p. 162106, 2010.
J. Yang, Cui, S. , Ma, T. P. , Hung, T. - H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. ,
“Electron tunneling spectroscopy of electrically active traps in AlGaN/GaN high electron mobility transistors”,
Applied Physics Letters, vol. 103, p. 223507, 2013.
S. Avasthi, Qi, Y. , Vertelov, G. , Schwartz, J. , Kahn, A. , and Sturm, J. C. ,
“Electronic structure and band alignment of 9, 10-phenanthrenequinone passivated silicon surfaces”,
Surface Science, vol. 605, p. 1308, 2011.
P. Rawat, Nambiar, S. , Singh, R. , Selvaraja, S. Kumar, and , ,
“Embedded Silicon Gratings for High-efficiency Light-Chip Coupling to Thin Film Silicon Nitride Waveguides”, 2023.
T. - H. Hung, Sasaki, K. , Kramata, A. , Nath, D. N. , Park, P. Sung, Polchinski, C. , and Rajan, S. ,
“Energy band line-up of atomic layer deposited Al2O3 on ?-Ga2O3”,
Applied Physics Letters, vol. 104, p. 162106, 2014.
B. S. Vikram, Prakash, R. , Selvaraja, S. Kumar, and Supradeepa, V. R. ,
“Enhanced nonlinear spectral broadening and sub-picosecond pulse generation by adaptive spectral phase optimization of electro-optic frequency combs”,
Optics Express, vol. 28, pp. 11215–11226, 2020.
S. Benedict and Bhat, N. ,
“Enhanced sensor life using UV treatment of sulphur poisoned Pt-PtOx”,
Materials Research Bulletin, vol. 112, pp. 236–241, 2019.
A. Tripathy, Sreedharan, S. , Bhaskarla, C. , Majumdar, S. , Peneti, S. Kumar, Nandi, D. , and Sen, P. ,
“Enhancing the Bactericidal Efficacy of Nanostructured Multifunctional Surface Using an Ultrathin Metal Coating”,
Langmuir, vol. 33, pp. 12569–12579, 2017.
K. Chakraborty, Kumawat, N. , Sultana, S. , and Varma, M. M. ,
“Enhancing the quality factor of grating coupled plasmon resonance in optical recording media”,
Sensors and Actuators A: Physical, vol. 244, pp. 50–55, 2016.
S. Vura, Jeyaselvan, V. , Biswas, R. , Raghunathan, V. , Selvaraja, S. Kumar, and Raghavan, S. ,
“Epitaxial BaTiO3 on Si (100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer”,
ACS Applied Electronic Materials, 2021.
L. Ma, Nath, D. N. , Lee, II, E. W. , Lee, C. Hee, Yu, M. , Aerhart, A. , Rajan, S. , and Wu, Y. ,
“Epitaxial growth of large area single-crystalline few-layer {MoS}2 with high space charge mobility of 192 cm2/Vs”,
Applied Physics Letters, vol. 105, 2014.