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Publications

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S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , “Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , “Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”, ECS Transactions, vol. 80, pp. 101–107, 2017.
N. Bhat and Vasi, J. , “Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors”, IEEE Transactions on Nuclear Science, p. 2230, 1992.
N. Bhat, Jayaraman, B. , Pratap, R. , Bagga, S. , and Mohan, S. , “Integrated CMOS gas sensors”, in Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on, 2009, pp. 1-5.
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. , “Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”, Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
A
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , “In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.

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