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Publications

Found 316 results
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D
R. Balasubramanian, Pal, S. , Joshi, H. , Rao, A. , Naik, A. , Varma, M. M. , Chakraborty, B. , and Maiti, P. K. , “DNA Translocation through Hybrid Bilayer Nanopores”, The Journal of Physical Chemistry C, 2019.
R. Balasubramanian, Pal, S. , Rao, A. , Naik, A. , Chakraborty, B. , Maiti, P. K. , and Varma, M. , “DNA translocation through vertically stacked 2D layers of graphene & hexagonal Boron Nitride heterostructure nanopore”, 2020.
E
S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , and Mayo, M. J. , “The Effect of Grain Size, Porosity and Yttria Content on the Thermal Conductivity of nanocrystalline Zirconia”, Scripta Materialia, vol. 39, pp. 1119-1125, 1998.
A. Banerjee, K Narayanachari, V. L. V. , and Raghavan, S. , “Effect of in situ stress on grain growth and texture evolution in sputtered YSZ/Si films”, RSC Advances, vol. 7, pp. 17832–17840, 2017.
S. B. Rudraswamy, Shwetha, H. R. , and Bhat, N. , “Effect of rapid thermal annealing on Material, Electrical and Sensing characteristics of Ag-doped CaTiO 3-CuO thin film Carbon-dioxide Gas sensors”, IEEE Sensors Letters, 2022.
S. Pal, Ramkumar, B. , Jugade, S. , Rao, A. , Naik, A. , Chakraborty, B. , and Varma, M. M. , “Effect of single nanoparticle-nanopore interaction strength on ionic current modulation”, Sensors and Actuators B: Chemical, p. 128785, 2020.
S. Pal, Ramkumar, B. , Jugade, S. , Rao, A. , Naik, A. , Chakraborty, B. , and Varma, M. M. , “Effect of single nanoparticle-nanopore interaction strength on ionic current modulation”, Sensors and Actuators B: Chemical, p. 128785, 2020.
C. Samanta, Arora, N. , Raghavan, S. , Naik, A. K. , and , , “The effect of strain on effective Duffing nonlinearity in the CVD-MoS 2 resonator”, Nanoscale, vol. 11, pp. 8394–8401, 2019.
V. Shastri, Majumder, S. , Ashok, A. , Roy, K. , Pratap, R. , and Kumar, P. , “Electric current-assisted manipulation of liquid metals using a stylus at micro-and nano-scales”, Nanotechnology, 2022.
M. Esposto, Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , Hung, T. - H. , and Rajan, S. , “Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride”, Applied Physics Letters, vol. 99, p. 133503, 2011.
P. Sung Park, Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , “Electron Gas Dimensionality Engineering in AlGaN/GaN HEMTs using Polarization”, Applied Physics Letters, vol. 100, p. 063507, 2012.
D. V. Sridhar Rao, Jain, A. , Lamba, S. , Muraleedharan, K. , and Muralidharan, R. , “Electron microscopy investigations of purity of AlN interlayer in AlxGa1?xN/GaN heterostructures grown by plasma assisted molecular beam epitaxy”, Appl. Phys. Lett, vol. 102, 2013.
D. N. Nath, Ma, L. , Lee, C. H. , Lee, E. , Arehart, A. , Wu, Y. , and Rajan, S. , “Electron transport in large-area epitaxial MoS2”, in 72nd Device Research Conference, 2014, pp. 89-90.
D. N. Nath, Hsieh, E. , Keller, S. , DenBaars, S. , Mishra, U. K. , and Rajan, S. , “Electron Transport in Vicinal N-polar AlGaN/GaN heterostructures”, Applied Physics Letters, vol. 97, p. 162106, 2010.
J. Yang, Cui, S. , Ma, T. P. , Hung, T. - H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , “Electron tunneling spectroscopy of electrically active traps in AlGaN/GaN high electron mobility transistors”, Applied Physics Letters, vol. 103, p. 223507, 2013.
P. Rawat, Nambiar, S. , Singh, R. , Selvaraja, S. Kumar, and , , “Embedded Silicon Gratings for High-efficiency Light-Chip Coupling to Thin Film Silicon Nitride Waveguides”, 2023.
T. - H. Hung, Sasaki, K. , Kramata, A. , Nath, D. N. , Park, P. Sung, Polchinski, C. , and Rajan, S. , “Energy band line-up of atomic layer deposited Al2O3 on ?-Ga2O3”, Applied Physics Letters, vol. 104, p. 162106, 2014.
M. Shrivastava, Gupta, S. Dutta, Soni, A. , Raghavan, S. , and Bhat, N. , “Enhancement mode high electron mobility transistor (hemt)”. 2019.
R. P. Rajan and Ghosh, A. , “Enhancement of circular differential deflection of light in an optically active medium”, Optics Letters, vol. 37, pp. 1232–1234, 2012.
S. Vura, Jeyaselvan, V. , Biswas, R. , Raghunathan, V. , Selvaraja, S. Kumar, and Raghavan, S. , “Epitaxial BaTiO3 on Si (100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer”, ACS Applied Electronic Materials, 2021.
S. Vura, Jeyaselvan, V. , Biswas, R. , Raghunathan, V. , Selvaraja, S. Kumar, and Raghavan, S. , “Epitaxial BaTiO3 on Si (100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer”, ACS Applied Electronic Materials, 2021.
L. Ma, Nath, D. N. , Lee, II, E. W. , Lee, C. Hee, Yu, M. , Aerhart, A. , Rajan, S. , and Wu, Y. , “Epitaxial growth of large area single-crystalline few-layer {MoS}2 with high space charge mobility of 192 cm2/Vs”, Applied Physics Letters, vol. 105, 2014.
C. K. Reddy and Pratap, R. , “Equivalent Viscous Damping for a Bilinear Hysteretic Oscillator”, ASEE Journal of Engineering Mechanics, vol. 126, 2000.
H. Chandrasekar, Singh, M. , Raghavan, S. , and Bhat, N. , “Estimation of background carrier concentration in fully depleted GaN films”, Semiconductor Science and Technology, vol. 30, p. 115018, 2015.
A. Jain, Raghavan, S. , and Redwing, J. M. , “Evolution of Surface Morphology and Film Stress during MOCVD growth of InN on Sapphire Substrates”, Journal of Crystal Growth, vol. 269, pp. 128–133, 2004.

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