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Publications

Found 316 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is R  [Clear All Filters]
1993
K. Rajanna, Mohan, S. , Nayak, M. M. , Gunasekaran, N. , and Muthunayagam, A. E. , Pressure transducer with Au-Ni thin-film strain gauges, IEEE Transactions on Electron Devices, vol. 40, pp. 521-524, 1993.
1998
S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , and Mayo, M. J. , The Effect of Grain Size, Porosity and Yttria Content on the Thermal Conductivity of nanocrystalline Zirconia, Scripta Materialia, vol. 39, pp. 1119-1125, 1998.
2000
C. K. Reddy and Pratap, R. , Can a Hopper Hop for Ever?, Current Science, vol. 79, 2000.
C. K. Reddy and Pratap, R. , Equivalent Viscous Damping for a Bilinear Hysteretic Oscillator, ASEE Journal of Engineering Mechanics, vol. 126, 2000.
2001
S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , and Mayo, M. J. , Thermal Properties of Trivalent and Pentavalent Co-doped Zirconia, Acta Materialia, vol. 49, pp. 169-179, 2001.
2002
S. Raghavan and Mayo, M. J. , The Hot Corrosion Resistance of 20 mol % YTaO4 Stabilized Tetragonal Zirconia and 14 mol % Ta2O5 Stabilized Orthorhombic Zirconia for Thermal Barrier Coating Applications, Surface and Coating Technology, vol. 160, pp. 187-196, 2002.
A. Chatterjee, Reddy, C. K. , and Ruina, A. , Persistent Passive Hopping and Juggling is Possible Even with Plastic Collisions, International Journal of Robotics Research, vol. 21, 2002.
A. Chatterjee, Reddy, C. K. , and Ruina, A. , Persistent Passive Hopping and Juggling is Possible Even with Plastic Collisions, International Journal of Robotics Research, vol. 21, 2002.
2003
C. K. Reddy and Pratap, R. , Multimodal Map and Complex Basin of Attraction of a Simple Hopper, Physical Review E, vol. 68, 2003.
2004
S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , Vassen, R. , and Mayo, M. J. , 20 mol % Y(Ta/Nb)O4 Doped Zirconia Thermal Barrier Coatings, Journal of The American Ceramic Society, vol. 87, pp. 431-437, 2004.
A. Jain, Raghavan, S. , and Redwing, J. M. , Evolution of Surface Morphology and Film Stress during MOCVD growth of InN on Sapphire Substrates, Journal of Crystal Growth, vol. 269, pp. 128–133, 2004.
A. Jain, Raghavan, S. , and Redwing, J. M. , Evolution of Surface Morphology and Film Stress during MOCVD growth of InN on Sapphire Substrates, Journal of Crystal Growth, vol. 269, pp. 128–133, 2004.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
S. Raghavan and Redwing, J. M. , In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.
S. Raghavan and Redwing, J. M. , In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.
S. Raghavan and Redwing, J. M. , Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates, Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
S. Raghavan and Redwing, J. M. , Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates, Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
2005
T. Srinivasan, Singh, S. N. , Tiwari, U. , Sharma, R. K. , Muralidharan, R. , Rao, D. V. Sridhar, Balamuralikrishnan, R. , and Muraleedharan, K. , Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots, Journal of Crystal Growth, vol. 280, 2005.
B. J. Parmar, Rajanna, K. , and Nayak, M. M. , Suitability of a point-contact SAW-based stiffness transducer for biomedical applications, in IEEE Sensors, 2005., 2005, p. 4 pp.-.
2006
S. Raghavan, Weng, X. , Dickey, E. , and Redwing, J. M. , Correlation of Growth Stress and Structural Evolution During MOCVD of GaN on (111) Si, Applied Physics Letters, vol. 88, p. 41904, 2006.
S. Raghavan, Weng, X. , Dickey, E. , and Redwing, J. M. , Correlation of Growth Stress and Structural Evolution During MOCVD of GaN on (111) Si, Applied Physics Letters, vol. 88, p. 41904, 2006.
K. R. Viveka, Ramgopal, S. , N, P. , Rajanna, K. , and Nayak, M. M. , Pressure Sensor Based Tsunami Detection System: A Laboratory Study, in 2006 5th IEEE Conference on Sensors, 2006, pp. 1392-1394.

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