S. Dawnee and Bhat, N. ,
“Effect of gate dielectric on the performance of ISFET with SU-8 encapsulation”,
ISSS Journal of Micro and Smart Systems, vol. 7, pp. 53–60, 2018.
A. Banerjee, K Narayanachari, V. L. V. , and Raghavan, S. ,
“Effect of in situ stress on grain growth and texture evolution in sputtered YSZ/Si films”,
RSC Advances, vol. 7, pp. 17832–17840, 2017.
S. Mukhopadhyay, Mitra, S. , Ding, Y. I. Ming, Ganapathi, K. L. , Misra, D. , Bhat, N. , Tapily, K. , Clark, R. D. , Consiglio, S. , Wajda, C. S. , and , ,
“Effect of post plasma oxidation on Ge gate stacks interface formation”,
ECS Transactions, vol. 72, pp. 303–312, 2016.
P. Vamsi Kris Nittala, Sahoo, K. , Bhat, N. , Bhat, K. N. , and Sen, P. ,
“Effect of substrate transfer on performance of vertically stacked ultrathin MOS devices”,
IEEE Transactions on Electron Devices, vol. 66, pp. 1153–1159, 2019.
P. Vamsi Kris Nittala, Sahoo, K. , Bhat, N. , Bhat, K. N. , and Sen, P. ,
“Effect of substrate transfer on performance of vertically stacked ultrathin MOS devices”,
IEEE Transactions on Electron Devices, vol. 66, pp. 1153–1159, 2019.
M. Esposto, Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , Hung, T. - H. , and Rajan, S. ,
“Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride”,
Applied Physics Letters, vol. 99, p. 133503, 2011.
S. Benedict and Bhat, N. ,
“Enhanced sensor life using UV treatment of sulphur poisoned Pt-PtOx”,
Materials Research Bulletin, vol. 112, pp. 236–241, 2019.
S. Benedict and Bhat, N. ,
“Enhanced sensor life using UV treatment of sulphur poisoned Pt-PtOx”,
Materials Research Bulletin, vol. 112, pp. 236–241, 2019.
A. Tripathy, Sreedharan, S. , Bhaskarla, C. , Majumdar, S. , Peneti, S. Kumar, Nandi, D. , and Sen, P. ,
“Enhancing the Bactericidal Efficacy of Nanostructured Multifunctional Surface Using an Ultrathin Metal Coating”,
Langmuir, vol. 33, pp. 12569–12579, 2017.
H. Chandrasekar, Singh, M. , Raghavan, S. , and Bhat, N. ,
“Estimation of background carrier concentration in fully depleted GaN films”,
Semiconductor Science and Technology, vol. 30, p. 115018, 2015.