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Publications

Found 363 results
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H
B. Jayaraman and Bhat, N. , “High Precision 16-bit Readout Gas Sensor Interface in 0.13 #x003BC;m CMOS”, in 2007 IEEE International Symposium on Circuits and Systems, 2007, pp. 3071-3074.
D. Vermeulen, Selvaraja, S. K. , Verheyen, P. , Lepage, G. , Bogaerts, W. , Absil, P. , Van Thourhout, D. , and Roelkens, G. , “High-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible silicon-on-insulator platform”, Optics Express, vol. 18, pp. 18278–18283, 2010.
C. Shekhar Prajapati and Bhat, N. , “Highly Sensitive CO Sensor Based on Thickness-Selective ZnO Thin Film: Device Fabrication and Packaging”, Crystal Research and Technology, vol. 54, p. 1800241, 2019.
K. Lakshmi Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , “High-performance HfO 2 back gated multilayer MoS 2 transistors”, IEEE Electron Device Letters, vol. 37, pp. 797–800, 2016.
K. Lakshmi Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , “High-performance HfO 2 back gated multilayer MoS 2 transistors”, IEEE Electron Device Letters, vol. 37, pp. 797–800, 2016.
K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , “High-Performance HfO2 Back Gated Multilayer MoS2 Transistors”, IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , “High-Performance HfO2 Back Gated Multilayer MoS2 Transistors”, IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
S. Bhattacharjee, Vatsyayan, R. , Ganapathi, K. Lakshmi, Ravindra, P. , Mohan, S. , and Bhat, N. , “Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2”, Advanced Electronic Materials, p. 1800863, 2019.
S. Bhattacharjee, Vatsyayan, R. , Ganapathi, K. Lakshmi, Ravindra, P. , Mohan, S. , and Bhat, N. , “Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2”, Advanced Electronic Materials, p. 1800863, 2019.
C. S. Prajapati, Visser, D. , Anand, S. , and Bhat, N. , “Honeycomb type ZnO nanostructures for sensitive and selective CO detection”, Sensors and Actuators B: Chemical, vol. 252, pp. 764–772, 2017.
B. P. Harish, Bhat, N. , and Patil, M. B. , “Hybrid-CV Modeling for Estimating the Variability in Dynamic Power”, J. Low Power Electronics ASP, vol. 4, pp. 263–274, 2008.
R. Kumar Jha, Sakhuja, N. , Jakhar, S. , and Bhat, N. , “Hydrogen Sulfide Gas Sensing Capabilities of Solution Processed Vanadium Pentoxide Nanosheets”, IEEE Transactions on Nanotechnology, vol. 18, pp. 932–939, 2019.
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A. Khanna, Subramanian, A. Z. , Häyrinen, M. , Selvaraja, S. K. , Verheyen, P. , Van Thourhout, D. , Honkanen, S. , Lipsanen, H. , and Baets, R. , “Impact of ALD grown passivation layers on silicon nitride based integrated optics devices for very-near-infrared wavelengths”, Optics Express, vol. 22, pp. 5684–5692, 2014.
A. Sankar Medury, Bhat, K. N. , and Bhat, N. , “Impact of carrier quantum confinement on the short channel effects of double-gate silicon-on-insulator FINFETs”, Microelectronics Journal, vol. 55, pp. 143–151, 2016.
A. Sankar Medury, Bhat, K. N. , and Bhat, N. , “Impact of carrier quantum confinement on the short channel effects of double-gate silicon-on-insulator FINFETs”, Microelectronics Journal, vol. 55, pp. 143–151, 2016.
R. Srinivasan and Bhat, N. , “Impact of channel engineering on unity gain frequency and noise-figure in 90nm NMOS transistor for RF applications”, in 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design, 2005, pp. 392-396.
K. Maitra and Bhat, N. , “Impact of Gate to Source/Drain Overlap Length on 80 nm CMOS Circuit Performance”, IEEE Transactions on Electron Devices, pp. 409–414, 2004.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , “Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”, Journal of Applied Physics, vol. 127, p. 215705, 2020.
D. R. Nayak, Bhat, N. , Venkatapathi, M. , and Umapathy, S. , “Impact of ultrathin dielectric spacers on SERS: energy transfer between polarized charges and plasmons”, Journal of Materials Chemistry C, vol. 5, pp. 2123–2129, 2017.
R. Soman, Raghavan, S. , and Bhat, N. , “An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate”, Semiconductor Science and Technology, vol. 34, p. 125011, 2019.
V. Mishra, Ananthasuresh, G. K. , Bhat, N. , Nageswari, K. , Contractor, A. Q. , Kottantharayil, A. , Jamadagni, H. S. , Mohan, S. , Murthy, T. , Pratap, R. , Pinto, R. , Rao, V. R. , Vasi, J. M. , Shivashankar, S. A. , Venkataraman, V. , and Vinoy, K. J. , “Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India”, in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-5.
G. R. Prashanth, Murali, P. , Varma, M. M. , and Bhat, N. , “In-situ impedance spectroscopy of layer-by-layer self-assembly of polyelectrolytes”, in Emerging Electronics (ICEE), 2012 International Conference on, 2012, pp. 1-4.
N. Bhat, Jayaraman, B. , Pratap, R. , Bagga, S. , and Mohan, S. , “Integrated CMOS gas sensors”, in Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on, 2009, pp. 1-5.
N. Bhat, Jayaraman, B. , Pratap, R. , Bagga, S. , and Mohan, S. , “Integrated CMOS gas sensors”, in Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on, 2009, pp. 1-5.
J. S. Gaggatur and Banerjee, G. , “Integrated temperature sensor for reconfigurable radio frequency synthesizer”, in Electronics, Computing and Communication Technologies (CONECCT), 2015 IEEE International Conference on, 2015, pp. 1-6.

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