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Publications

Found 194 results
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E
D. N. Nath, Ma, L. , Lee, C. H. , Lee, E. , Arehart, A. , Wu, Y. , and Rajan, S. , Electron transport in large-area epitaxial MoS2, in 72nd Device Research Conference, 2014, pp. 89-90.
P. Sung Park, Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , Electron Gas Dimensionality Engineering in AlGaN/GaN HEMTs using Polarization, Applied Physics Letters, vol. 100, p. 063507, 2012.
M. Esposto, Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , Hung, T. - H. , and Rajan, S. , Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride, Applied Physics Letters, vol. 99, p. 133503, 2011.
P. Vamsi Kris Nittala, Sahoo, K. , Bhat, N. , Bhat, K. N. , and Sen, P. , Effect of substrate transfer on performance of vertically stacked ultrathin MOS devices, IEEE Transactions on Electron Devices, vol. 66, pp. 1153–1159, 2019.
C. Samanta, Arora, N. , Raghavan, S. , Naik, A. K. , and , , The effect of strain on effective Duffing nonlinearity in the CVD-MoS 2 resonator, Nanoscale, vol. 11, pp. 8394–8401, 2019.
S. Pal, Ramkumar, B. , Jugade, S. , Rao, A. , Naik, A. , Chakraborty, B. , and Varma, M. M. , Effect of single nanoparticle-nanopore interaction strength on ionic current modulation, Sensors and Actuators B: Chemical, p. 128785, 2020.
N. Arora and Naik, A. K. , Effect of internal resonance on the dynamics of MoS2 resonator, arXiv preprint arXiv:2102.10384, 2021.
A. Banerjee, K Narayanachari, V. L. V. , and Raghavan, S. , Effect of in situ stress on grain growth and texture evolution in sputtered YSZ/Si films, RSC Advances, vol. 7, pp. 17832–17840, 2017.
A. Kumar, Tripathy, A. , Nam, Y. , Lee, C. , and Sen, P. , Effect of Geometrical Parameters on Rebound of Impacting Droplets on Leaky Superhydrophobic Meshes, Soft Matter, 2018.
D
S. Srivatsa, Belthangadi, P. , Ekambaram, S. , Pai, M. , Sen, P. , Uhl, T. , Kumar, S. , Grabowski, K. , and Nayak, M. M. , Dynamic response study of Ti 3 C 2-MXene films to shockwave and impact forces, RSC Advances, vol. 10, pp. 29147–29155, 2020.
M. M. Parmar, Gangavarapu, P. R. Yasasvi, and Naik, A. K. , Dynamic range tuning of graphene nanoresonators, Applied Physics Letters, vol. 107, p. 113108, 2015.
W. C. Nelson, Sen, P. , and Kim, C. - J. , Dynamic contact angles and hysteresis under electrowetting-on-dielectric, Langmuir, vol. 27, pp. 10319–10326, 2011.
R. Balasubramanian, Pal, S. , Rao, A. , Naik, A. , Chakraborty, B. , Maiti, P. K. , and Varma, M. , DNA translocation through vertically stacked 2D layers of graphene & hexagonal Boron Nitride heterostructure nanopore, 2020.
R. Balasubramanian, Pal, S. , Joshi, H. , Rao, A. , Naik, A. , Varma, M. M. , Chakraborty, B. , and Maiti, P. K. , DNA Translocation through Hybrid Bilayer Nanopores, The Journal of Physical Chemistry C, 2019.
S. Joshi, Nayak, M. M. , and Rajanna, K. , Distributed piezoelectric Thin Film Sensor Array for monitoring impact events, in SENSORS, 2013 IEEE, 2013, pp. 1-4.
P. Ghosh, Paria, D. , Balasubramanian, K. , Ghosh, A. , Narayanan, R. , and Raghavan, S. , Directed Microwave-Assisted Self-Assembly of Au–Graphene–Au Plasmonic Dimers for SERS Applications, Advanced Materials Interfaces, 2019.
H. Gupta, Nayak, B. , Roy, K. , Ashok, A. , Pratap, R. , and , , Development of Micromachined Piezoelectric Near-Ultrasound Transducers for Data-over-Sound, in 2020 IEEE International Ultrasonics Symposium (IUS), 2020.
J. Yang, Cui, S. , Ma, T. P. , Hung, T. H. , Nath, D. N. , Krishnamoorthy, S. , and Rajan, S. , Determination of trap energy levels in AlGaN/GaN HEMT, in Device Research Conference (DRC), 2013 71st Annual, 2013, pp. 79-80.
P. Sung Park, Nath, D. N. , and Rajan, S. , Demonstration of negative quantum capacitance in N-polar AlGaN/GaN HEMT, IEEE Electron Device Letters, vol. 33, 2012.
A. Kalra, Vura, S. , Rathkanthiwar, S. , Muralidharan, R. , Raghavan, S. , and Nath, D. N. , Demonstration of high-responsivity epitaxial $\beta$-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector, Applied Physics Express, vol. 11, p. 064101, 2018.
E. W. Lee, Ma, L. , Nath, D. N. , Lee, C. H. , Wu, Y. , and Rajan, S. , Demonstration of 2D/3D p-MoS2/n-SiC junction, in 72nd Device Research Conference, 2014, pp. 79-80.
K. Narayanan Nampoothiri, Bobji, M. S. , and Sen, P. , De-Icing Device With Self-Adjusting Power Consumption and Ice Sensing Capabilities, Journal of Microelectromechanical Systems, vol. 29, pp. 562–570, 2020.
C
M. R. Laskar, Ma, L. , K, S. K. , Park, P. Sung, Krishnamoorthy, S. , Lee, II, E. , Shao, Y. , Nath, D. N. , Lu, W. , Wu, Y. , and Rajan, S. , CVD of Single Crystal (0001) Oriented MoS2 Thin Film Over a Large Area, Applied Physics Letters, vol. 102, p. 252108, 2013.
A. Naik, Buu, O. , LaHaye, M. D. , Armour, A. D. , Clerk, A. A. , Blencowe, M. P. , and Schwab, K. C. , Cooling a nanomechanical resonator with quantum back-action, Nature, vol. 443, pp. 193-196, 2006.
A. Gowrisankar, Charan, V. Sai, Chandrasekar, H. , Venugopalarao, A. , Muralidharan, R. , Raghavan, S. , and Nath, D. N. , Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications, IEEE Transactions on Electron Devices, 2023.

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