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Publications

Found 794 results
Author Title [ Type(Desc)] Year
Journal Article
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , “Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”, Journal of Applied Physics, vol. 127, p. 215705, 2020.
D. R. Nayak, Bhat, N. , Venkatapathi, M. , and Umapathy, S. , “Impact of ultrathin dielectric spacers on SERS: energy transfer between polarized charges and plasmons”, Journal of Materials Chemistry C, vol. 5, pp. 2123–2129, 2017.
D. Dasgupta, Peddi, S. Srinivas, Saini, D. K. , and Ghosh, A. , “Implantation and retrieval of magnetic nanobots for treatment of endodontic re-infection in human dentine”, 2021.
B. Medhi, Hegde, G. M. , Gorthi, S. Siva, Reddy, K. Jagannath, Roy, D. , and Vasu, R. Mohan, “Improved quantitative visualization of hypervelocity flow through wavefront estimation based on shadow casting of sinusoidal gratings”, Applied optics, vol. 55, pp. 6060–6071, 2016.
S. Khan and Ananthasuresh, G. K. , “Improving the Sensitivity and Bandwidth of In-Plane Capacitive Microaccelerometers Using Compliant Mechanical Amplifiers”, Journal of Microelectromechanical Systems, vol. 23, pp. 871-887, 2014.
R. Soman, Raghavan, S. , and Bhat, N. , “An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate”, Semiconductor Science and Technology, vol. 34, p. 125011, 2019.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , “Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
P. Mandal, Chopra, V. , and Ghosh, A. , “Independent Direction Control of Magnetic Nanomotors”, ACS Nano, vol. 9, 2015.
A. Dash, Mere, V. , Selvaraja, S. K. , and Naik, A. K. , “Independently reconfigurable internal loss and resonance-shift in an interferometer-embedded optical cavity”, arXiv preprint arXiv:2106.12899, 2021.
A. Kumar Pandey, Pratap, R. , and Chau, F. Siong, “Influence of Boundary Conditions on the Dynamic Characteristics of Squeeze Films in MEMS Devices”, IEEE/ASME Journal of MEMS, vol. 16, pp. 893–903, 2007.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , “Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics”, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
J. B. George, Abraham, G. M. , Singh, K. , Ankolekar, S. M. , Amrutur, B. , and Sikdar, S. K. , “Input coding for neuro-electronic hybrid systems”, Biosystems, vol. 126, pp. 1-11, 2014.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , “Insights on defect-mediated heterogeneous nucleation of graphene on copper”, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , “In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
S. Raghavan and Redwing, J. M. , “In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates”, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , “Integrated X-Band Inductor With a Nanoferrite Film Core”, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
N. Mohan, , , Soman, R. , and Raghavan, S. , “Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes”, Journal of Applied Physics, vol. 118, p. 135302, 2015.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , “Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study”, Phys. Rev. B, vol. 64, p. 155204, 2001.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , “Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”, Applied Physics Letters, vol. 102, p. 072105, 2013.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for enhancement-mode GaN MISHEMT”, IEEE Electron Device Letters, vol. 99, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , “Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”, ECS Transactions, vol. 80, pp. 101–107, 2017.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. , “Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”, Solid-State Electronics, vol. 137, pp. 117–122, 2017.
N. Bhat and Vasi, J. , “Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors”, IEEE Transactions on Nuclear Science, p. 2230, 1992.

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