I
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. ,
“Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”,
Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. ,
“Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”,
Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
V. Mishra, Ananthasuresh, G. K. , Bhat, N. , Nageswari, K. , Contractor, A. Q. , Kottantharayil, A. , Jamadagni, H. S. , Mohan, S. , Murthy, T. , Pratap, R. , Pinto, R. , Rao, V. R. , Vasi, J. M. , Shivashankar, S. A. , Venkataraman, V. , and Vinoy, K. J. ,
“Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India”, in
2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-5.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. ,
“Insights on defect-mediated heterogeneous nucleation of graphene on copper”,
The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. ,
“Insights on defect-mediated heterogeneous nucleation of graphene on copper”,
The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. ,
“Insights on defect-mediated heterogeneous nucleation of graphene on copper”,
The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. ,
“Insights on defect-mediated heterogeneous nucleation of graphene on copper”,
The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. ,
“In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”,
Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. ,
“In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”,
Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
N. Mohan, , , Soman, R. , and Raghavan, S. ,
“Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes”,
Journal of Applied Physics, vol. 118, p. 135302, 2015.
M. Ramanathan and Pratap, R. ,
“Integration of a Compliant Thermal Actuator for Unlatching in a Mems Latch Accelerometer”, in
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. ,
“Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”,
Applied Physics Letters, vol. 102, p. 072105, 2013.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. ,
“Interface Charge Engineering for enhancement-mode GaN MISHEMT”,
IEEE Electron Device Letters, vol. 99, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. ,
“Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”,
IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. ,
“Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”,
Solid-State Electronics, vol. 137, pp. 117–122, 2017.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. ,
“Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”,
Solid-State Electronics, vol. 137, pp. 117–122, 2017.
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. ,
“Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”,
Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
S. Raghavan and Redwing, J. M. ,
“Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”,
Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
S. Raghavan and Redwing, J. M. ,
“Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”,
Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.