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Publications

Found 363 results
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2017
S. Bhattacharjee, Ganapathi, K. Lakshmi, Chandrasekar, H. , Paul, T. , Mohan, S. , Ghosh, A. , Raghavan, S. , and Bhat, N. , “Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2 FETs”, Advanced Electronic Materials, vol. 3, 2017.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Chandrasekar, H. , Paul, T. , Mohan, S. , Ghosh, A. , Raghavan, S. , and Bhat, N. , “Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS2 FETs”, Advanced Electronic Materials, vol. 3, 2017.
T. Biswas, Ravindra, P. , Athresh, E. , Ranjan, R. , Avasthi, S. , and Jain, M. , “Optical Properties of Zn2Mo3O8: Combination of Theoretical and Experimental Study”, The Journal of Physical Chemistry C, vol. 121, pp. 24766–24773, 2017.
C. Shekhar Prajapati, Soman, R. , Rudraswamy, S. B. , Nayak, M. , and Bhat, N. , “Single Chip Gas Sensor Array for Air Quality Monitoring”, Journal of Microelectromechanical Systems, vol. 26, pp. 433–439, 2017.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Mohan, S. , and Bhat, N. , “A sub-thermionic MoS2 FET with tunable transport”, Applied Physics Letters, vol. 111, p. 163501, 2017.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Mohan, S. , and Bhat, N. , “A sub-thermionic MoS2 FET with tunable transport”, Applied Physics Letters, vol. 111, p. 163501, 2017.
P. Kumar Basu, Benedict, S. , Kallat, S. , and Bhat, N. , “A suspended low power gas sensor with in-plane heater”, Journal of Microelectromechanical Systems, vol. 26, pp. 48–50, 2017.
P. Kumar Basu, Benedict, S. , Kallat, S. , and Bhat, N. , “A suspended low power gas sensor with in-plane heater”, Journal of Microelectromechanical Systems, vol. 26, pp. 48–50, 2017.
P. Kumar Basu, Benedict, S. , Kallat, S. , and Bhat, N. , “A suspended low power gas sensor with in-plane heater”, Journal of Microelectromechanical Systems, vol. 26, pp. 48–50, 2017.
H. Chandrasekar, Bhat, K. N. , Rangarajan, M. , Raghavan, S. , and Bhat, N. , “Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces”, Scientific reports, vol. 7, p. 15749, 2017.
H. Chandrasekar, Bhat, K. N. , Rangarajan, M. , Raghavan, S. , and Bhat, N. , “Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces”, Scientific reports, vol. 7, p. 15749, 2017.
2016
I. Raja, Banerjee, G. , Zeidan, M. A. , and Abraham, J. A. , “A 0.1 #x2013;3.5-GHz Duty-Cycle Measurement and Correction Technique in 130-nm CMOS”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 24, pp. 1975-1983, 2016.
V. Khatri and Banerjee, G. , “A 0.25-3.25-GHz Wideband CMOS-RF Spectrum Sensor for Narrowband Energy Detection”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. PP, pp. 1-12, 2016.
J. S. Gaggatur, Dixena, P. K. , and Banerjee, G. , “A 3.2 mW 0.13 ¿¿m high sensitivity frequency-domain CMOS capacitance interface”, in 2016 IEEE International Symposium on Circuits and Systems (ISCAS), 2016, pp. 1070-1073.
S. Mukhopadhyay, Mitra, S. , Ding, Y. I. Ming, Ganapathi, K. L. , Misra, D. , Bhat, N. , Tapily, K. , Clark, R. D. , Consiglio, S. , Wajda, C. S. , and , , “Effect of post plasma oxidation on Ge gate stacks interface formation”, ECS Transactions, vol. 72, pp. 303–312, 2016.
K. V. L. V. Narayanachari, Chandrasekar, H. , Banerjee, A. , Varma, K. B. R. , Ranjan, R. , Bhat, N. , and Raghavan, S. , “Growth stress induced tunability of dielectric permittivity in thin films”, Journal of Applied Physics, vol. 119, p. 014106, 2016.
K. V. L. V. Narayanachari, Chandrasekar, H. , Banerjee, A. , Varma, K. B. R. , Ranjan, R. , Bhat, N. , and Raghavan, S. , “Growth stress induced tunability of dielectric permittivity in thin films”, Journal of Applied Physics, vol. 119, p. 014106, 2016.
K. Lakshmi Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , “High-performance HfO 2 back gated multilayer MoS 2 transistors”, IEEE Electron Device Letters, vol. 37, pp. 797–800, 2016.
K. Lakshmi Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , “High-performance HfO 2 back gated multilayer MoS 2 transistors”, IEEE Electron Device Letters, vol. 37, pp. 797–800, 2016.
K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , “High-Performance HfO2 Back Gated Multilayer MoS2 Transistors”, IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , “High-Performance HfO2 Back Gated Multilayer MoS2 Transistors”, IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
A. Sankar Medury, Bhat, K. N. , and Bhat, N. , “Impact of carrier quantum confinement on the short channel effects of double-gate silicon-on-insulator FINFETs”, Microelectronics Journal, vol. 55, pp. 143–151, 2016.
A. Sankar Medury, Bhat, K. N. , and Bhat, N. , “Impact of carrier quantum confinement on the short channel effects of double-gate silicon-on-insulator FINFETs”, Microelectronics Journal, vol. 55, pp. 143–151, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.

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