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Publications

Found 316 results
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Journal Article
B. Medhi, Hegde, G. M. , Gorthi, S. Siva, Reddy, K. Jagannath, Roy, D. , and Vasu, R. Mohan, “Improved quantitative visualization of hypervelocity flow through wavefront estimation based on shadow casting of sinusoidal gratings”, Applied optics, vol. 55, pp. 6060–6071, 2016.
B. Medhi, Hegde, G. M. , Gorthi, S. Siva, Reddy, K. Jagannath, Roy, D. , and Vasu, R. Mohan, “Improved quantitative visualization of hypervelocity flow through wavefront estimation based on shadow casting of sinusoidal gratings”, Applied optics, vol. 55, pp. 6060–6071, 2016.
R. Soman, Raghavan, S. , and Bhat, N. , “An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate”, Semiconductor Science and Technology, vol. 34, p. 125011, 2019.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , “Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , “Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , “Insights on defect-mediated heterogeneous nucleation of graphene on copper”, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , “Insights on defect-mediated heterogeneous nucleation of graphene on copper”, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , “Insights on defect-mediated heterogeneous nucleation of graphene on copper”, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , “Insights on defect-mediated heterogeneous nucleation of graphene on copper”, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , “In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , “In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
S. Raghavan and Redwing, J. M. , “In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates”, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.
S. Raghavan and Redwing, J. M. , “In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates”, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.
N. Mohan, , , Soman, R. , and Raghavan, S. , “Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes”, Journal of Applied Physics, vol. 118, p. 135302, 2015.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , “Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”, Applied Physics Letters, vol. 102, p. 072105, 2013.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for enhancement-mode GaN MISHEMT”, IEEE Electron Device Letters, vol. 99, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”, Solid-State Electronics, vol. 137, pp. 117–122, 2017.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”, Solid-State Electronics, vol. 137, pp. 117–122, 2017.
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. , “Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”, Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
S. Raghavan and Redwing, J. M. , “Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”, Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
S. Raghavan and Redwing, J. M. , “Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”, Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
A. N. Mallya and Ramamurthy, P. C. , “Investigation of selective sensing of a diamine for aldehyde by experimental and simulation studies”, Analyst, vol. 139, pp. 6456–6466, 2014.
D. Roy, Sreenivasulu, K. V. , and Kumar, P. S. A. , “Investigation on non-exchange spring behaviour and exchange spring behaviour: A First Order Reversal Curve Analysis”, Appl. Phys. Lett., vol. 103, p. 222406, 2013.
A. Singh Chouhan, Jasti, N. Prathibha, Hadke, S. , Raghavan, S. , and Avasthi, S. , “Large grained and high charge carrier lifetime CH3NH3PbI3 thin-films: implications for perovskite solar cells”, Current Applied Physics, vol. 17, pp. 1335–1340, 2017.

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