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Publications

Found 194 results
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T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , and Rajan, S. , “Lateral energy band engineering of Al2O3/III-nitride interfaces”, in 72nd Device Research Conference, 2014, pp. 131-132.
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K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. , “Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”, Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , “Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”, Solid-State Electronics, vol. 137, pp. 117–122, 2017.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for enhancement-mode GaN MISHEMT”, IEEE Electron Device Letters, vol. 99, 2014.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , “Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”, Applied Physics Letters, vol. 102, p. 072105, 2013.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , “Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study”, Phys. Rev. B, vol. 64, p. 155204, 2001.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , “Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics”, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , “Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics”, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
V. Mishra, Ananthasuresh, G. K. , Bhat, N. , Nageswari, K. , Contractor, A. Q. , Kottantharayil, A. , Jamadagni, H. S. , Mohan, S. , Murthy, T. , Pratap, R. , Pinto, R. , Rao, V. R. , Vasi, J. M. , Shivashankar, S. A. , Venkataraman, V. , and Vinoy, K. J. , “Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India”, in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-5.
A. Dash, Mere, V. , Selvaraja, S. K. , and Naik, A. K. , “Independently reconfigurable internal loss and resonance-shift in an interferometer-embedded optical cavity”, arXiv preprint arXiv:2106.12899, 2021.
D. R. Nayak, Bhat, N. , Venkatapathi, M. , and Umapathy, S. , “Impact of ultrathin dielectric spacers on SERS: energy transfer between polarized charges and plasmons”, Journal of Materials Chemistry C, vol. 5, pp. 2123–2129, 2017.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , “Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”, Journal of Applied Physics, vol. 127, p. 215705, 2020.
Z. Yang, Nath, D. N. , Zhang, Y. , Krishnamoorthy, S. , Khurgin, J. , and Rajan, S. , “III-Nitride Tunneling Hot Electron Transfer Amplifier (THETA)”, in High-Frequency GaN Electronic Devices, Springer, 2020, pp. 109–157.
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A. Roychowdhury, Nandy, A. , Jog, C. S. , and Pratap, R. , “Hybrid elements for modeling squeeze film effects coupled with structural interactions in vibratory MEMS devices”, CMES: Computer Modeling in Engineering and Sciences, vol. 103, pp. 91-110, 2014.
K. B. Vinayakumar, Kulkarni, P. G. , Nayak, M. M. , Dinesh, N. S. , Hegde, G. M. , Ramachandra, S. G. , and Rajanna, K. , “A hollow stainless steel microneedle array to deliver insulin to a diabetic rat”, Journal of Micromechanics and Microengineering, vol. 26, p. 065013, 2016.
U. Ul Muazzam, M Raghavan, S. , Pratiyush, A. Singh, Muralidharan, R. , Raghavan, S. , Nath, D. N. , and Shivashankar, S. A. , “High-responsivity (In0. 26Ga0. 74) 2O3 UV detectors on sapphire realized by microwave irradiation-assisted deposition”, Journal of Alloys and Compounds, vol. 828, p. 154337, 2020.
B. N. Shivananju, Yamdagni, S. , Fazuldeen, R. , Kumar, A. K. S. , Nithin, S. P. , Varma, M. M. , and Asokan, S. , “Highly Sensitive Carbon Nanotubes Coated Etched Fiber Bragg Grating Sensor for Humidity Sensing”, IEEE Sensors Journal, vol. 14, pp. 2615-2619, 2014.
N. Neella, Gaddam, V. , Rajanna, K. , Nayak, M. M. , and Srinivas, T. , “Highly flexible and sensitive graphene-silver nanocomposite strain sensor”, in SENSORS, 2015 IEEE, 2015, pp. 1-4.
N. Neella, Gaddam, V. , Rajanna, K. , Nayak, M. M. , and Srinivas, T. , “Highly flexible and sensitive graphene-silver nanocomposite strain sensor”, in SENSORS, 2015 IEEE, 2015, pp. 1-4.
A. Kumar, Nambiar, S. , Kallega, R. , Ranganath, P. , Ea, P. , and Selvaraja, S. Kumar, “High-efficiency vertical fibre-to-polymer waveguide coupling scheme for scalable polymer photonic circuits”, Optics Express, vol. 29, pp. 9699–9710, 2021.
A. Singh Pratiyush, Krishnamoorthy, S. , Solanke, S. Vishnu, Xia, Z. , Muralidharan, R. , Rajan, S. , and Nath, D. N. , “High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector”, Applied Physics Letters, vol. 110, p. 221107, 2017.
R. K. Mech, Mohta, N. , Chatterjee, A. , Selvaraja, S. Kumar, Muralidharan, R. , and Nath, D. N. , “High Responsivity and Photovoltaic Effect Based on Vertical Transport in Multilayer α-In2Se3”, physica status solidi (a), vol. 217, p. 1900932, 2020.

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