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Publications

Found 363 results
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T. A. Chowdary and Banerjee, G. , “An integrated X-band FMCW radar transceiver in 130-nm CMOS technology”, in 2015 IEEE MTT-S International Microwave and RF Conference (IMaRC), 2015, pp. 151-154.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , “Integrated X-Band Inductor With a Nanoferrite Film Core”, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , “Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”, ECS Transactions, vol. 80, pp. 101–107, 2017.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , “Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”, ECS Transactions, vol. 80, pp. 101–107, 2017.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. , “Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
N. Bhat and Vasi, J. , “Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors”, IEEE Transactions on Nuclear Science, p. 2230, 1992.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , “Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , “Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. , “Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”, Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
K. Majumdar, V.R., K. , Murali, M. , Bhat, N. , and Lin, Y. - M. , “Intrinsic limits of subthreshold slope in biased bilayer graphene transistor”, Applied Physics Letters, vol. 96, p. 123504, 2010.
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. , “Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT”, Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
D. Visser, Ye, Z. , Prajapati, C. S. , Bhat, N. , and Anand, S. , “Investigations of Sol-Gel ZnO Films Nanostructured by Reactive Ion Beam Etching for Broadband Anti-Reflection”, ECS Journal of Solid State Science and Technology, vol. 6, pp. P653–P659, 2017.
S. Ghatak, Banerjee, A. , and Sikdar, S. K. , “Ischaemic concentrations of lactate increase TREK 1 channel activity by interacting with a single histidine residue in the carboxy terminal domain”, Journal of Physiology (Lond.), vol. 594, pp. 59–81, 2016.
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T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , and Rajan, S. , “Lateral energy band engineering of Al2O3/III-nitride interfaces”, in 72nd Device Research Conference, 2014, pp. 131-132.
A. K. R. and Bhat, N. , “Linear transconductor with flipped voltage follower in 130 nm CMOS”, Analog Integr Circ Signal Processing, vol. 13, 2009.
A. Banerjee, Ghatak, S. , and Sikdar, S. K. , “L-Lactate mediates neuroprotection against ischaemia by increasing TREK 1 channel expression in rat hippocampal astrocytes in vitro”, J Neurochem, vol. 138, pp. 265-281, 2016.
S. K. Selvaraja, Bogaerts, W. , and Van Thourhout, D. , “Loss reduction in silicon nanophotonic waveguide micro-bends through etch profile improvement”, Optics Communications, vol. 284, pp. 2141–2144, 2011.
S. Benedict, Basu, P. Kumar, and Bhat, N. , “Low power gas sensor array on flexible acetate substrate”, Journal of Micromechanics and Microengineering, vol. 27, p. 075024, 2017.
S. Benedict, Basu, P. Kumar, and Bhat, N. , “Low power gas sensor array on flexible acetate substrate”, Journal of Micromechanics and Microengineering, vol. 27, p. 075024, 2017.
S. Benedict, Basu, P. Kumar, and Bhat, N. , “Low power gas sensor array on flexible acetate substrate”, Journal of Micromechanics and Microengineering, vol. 27, p. 075024, 2017.
S. K. Selvaraja, Sleeckx, E. , Schaekers, M. , Bogaerts, W. , Van Thourhout, D. , Dumon, P. , and Baets, R. , “Low-Loss Amorphous Silicon-On-Insulator Technology for Photonic Integrated Circuitry”, Optics Communications, vol. 282, pp. 1767–1770, 2009.
S. K. Selvaraja, Sleeckx, E. , Schaekers, M. , Bogaerts, W. , Van Thourhout, D. , Dumon, P. , and Baets, R. , “Low-Loss Amorphous Silicon-On-Insulator Technology for Photonic Integrated Circuitry”, Optics Communications, vol. 282, pp. 1767–1770, 2009.
A. Z. Subramanian, Neutens, P. , Dhakal, A. , Jansen, R. , Claes, T. , Rottenberg, X. , Peyskens, F. , Selvaraja, S. K. , Helin, P. , Dubois, B. , Leyssens, K. , Severi, S. , Deshpande, P. , Baets, R. , and Van Dorpe, P. , “Low-Loss Singlemode PECVD Silicon Nitride Photonic Wire Waveguides for 532-900 nm Wavelength Window Fabricated Within a CMOS Pilot Line”, Photonics Journal, IEEE, vol. 5, p. 2202809, 2013.

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