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D. Visser, Ye, Z. , Prajapati, C. S. , Bhat, N. , and Anand, S. ,
“Investigations of Sol-Gel ZnO Films Nanostructured by Reactive Ion Beam Etching for Broadband Anti-Reflection”,
ECS Journal of Solid State Science and Technology, vol. 6, pp. P653–P659, 2017.
K. Sandeep Sharma, Jen, H. - T. , Li, S. - S. , and Pillai, G. ,
“Investigation of support transducer enabled higher-order radial bulk mode MEMS resonator and low phase noise oscillator”,
Journal of Micromechanics and Microengineering, vol. 32, p. 084004, 2022.
P. Deshpande, Suri, P. , Jeong, H. - H. , Fischer, P. , Ghosh, A. , and Ghosh, A. ,
“Investigating photoresponsivity of graphene-silver hybrid nanomaterials in the ultraviolet”,
The Journal of Chemical Physics, vol. 152, p. 044709, 2020.
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. ,
“Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT”,
Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
S. Kumar, Abraham, E. , Kumar, P. , and Pratap, R. ,
“Introducing Water Electrolithography”,
ACS Omega, 2021.
S. Raghavan and Redwing, J. M. ,
“Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”,
Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
K. Majumdar, V.R., K. , Murali, M. , Bhat, N. , and Lin, Y. - M. ,
“Intrinsic limits of subthreshold slope in biased bilayer graphene transistor”,
Applied Physics Letters, vol. 96, p. 123504, 2010.
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. ,
“Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”,
Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. ,
“Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”,
IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. ,
“Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”,
IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
A. Pandey and Selvaraja, S. Kumar,
“Internally-loaded ring resonator configuration for optical filter applications”,
CSI transactions on ICT, vol. 5, pp. 135–141, 2017.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. ,
“Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”,
Solid-State Electronics, vol. 137, pp. 117–122, 2017.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. ,
“Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”,
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. ,
“Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”,
ECS Transactions, vol. 80, pp. 101–107, 2017.