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Publications

Found 555 results
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2005
A. Sarkar, Sonti, V. R. , and Pratap, R. , “A Coupled FEM-BEM Formulation in Structural Acoustics for Imaging a Material Inclusion”, Journal of Acoustics and Vibration, vol. 10, 2005.
A. Sarkar, Sonti, V. R. , and Pratap, R. , “A Coupled FEM-BEM Formulation in Structural Acoustics for Imaging a Material Inclusion”, Journal of Acoustics and Vibration, vol. 10, 2005.
R. Srinivasan and Bhat, N. , “Impact of channel engineering on unity gain frequency and noise-figure in 90nm NMOS transistor for RF applications”, in 18th International Conference on VLSI Design held jointly with 4th International Conference on Embedded Systems Design, 2005, pp. 392-396.
R. Srinivasan and Bhat, N. , “Scaling Characteristics of fNQS and ft in NMOSFETs with and without Supply Voltage Scaling”, Journal of the Indian Institute of Science, vol. 85, 2005.
R. Srinivasan and Bhat, N. , “Scaling Characteristics of fNQS and ft in NMOSFETs with Uniform and Non-uniform Channel Doping”, International Journal of Electronics, vol. 92, 2005.
T. Srinivasan, Singh, S. N. , Tiwari, U. , Sharma, R. K. , Muralidharan, R. , Rao, D. V. Sridhar, Balamuralikrishnan, R. , and Muraleedharan, K. , “Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots”, Journal of Crystal Growth, vol. 280, 2005.
T. Srinivasan, Singh, S. N. , Tiwari, U. , Sharma, R. K. , Muralidharan, R. , Rao, D. V. Sridhar, Balamuralikrishnan, R. , and Muraleedharan, K. , “Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots”, Journal of Crystal Growth, vol. 280, 2005.
T. Srinivasan, Singh, S. N. , Tiwari, U. , Sharma, R. K. , Muralidharan, R. , Rao, D. V. Sridhar, Balamuralikrishnan, R. , and Muraleedharan, K. , “Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots”, Journal of Crystal Growth, vol. 280, 2005.
2004
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , “Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , “Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , “Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , “In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
R. Singh and Bhat, N. , “An Offset Compensation Technique for Latch Type Sense Amplifier in High Speed Low Power SRAMs”, IEEE Transactions on VLSI Systems, pp. 652–657, 2004.
M. P. Singh, Thakur, C. S. , Shalini, K. , Banerjee, S. , Bhat, N. , and Shivashankar, S. A. , “Structural, Optical, and Electrical Characterization of Gadolinium Oxide Films Deposited by Low-pressure Metalorganic Chemical Vapour Deposition”, Journal of Applied Physics, vol. 96, pp. 5631–5637, 2004.
M. P. Singh, Thakur, C. S. , Shalini, K. , Banerjee, S. , Bhat, N. , and Shivashankar, S. A. , “Structural, Optical, and Electrical Characterization of Gadolinium Oxide Films Deposited by Low-pressure Metalorganic Chemical Vapour Deposition”, Journal of Applied Physics, vol. 96, pp. 5631–5637, 2004.
M. P. Singh, Thakur, C. S. , Shalini, K. , Banerjee, S. , Bhat, N. , and Shivashankar, S. A. , “Structural, Optical, and Electrical Characterization of Gadolinium Oxide Films Deposited by Low-pressure Metalorganic Chemical Vapour Deposition”, Journal of Applied Physics, vol. 96, pp. 5631–5637, 2004.
2003
H. C. Srinivasaiah and Bhat, N. , “Mixed Mode Simulation Approach to Characterize the Circuit Delay Sensitivity to Implant Dose Variations”, IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems, vol. 22, pp. 742–747, 2003.
H. C. Srinivasaiah and Bhat, N. , “Monte Carlo Analysis of the Implant Dose Sensitivity in 0.1 nm NMOSFET”, Solid-State Electronics, vol. 47/8, pp. 1379–1383, 2003.
P. K. Saxena and Bhat, N. , “Process technique for SEU reliability improvement of deep sub-micron SRAM cell”, Solid-State Electronics, vol. 47, pp. 661–664, 2003.
P. K. Saxena and Bhat, N. , “SEU Reliability Improvement Due to Source-Side Charge Collection in the Deep-Submicron SRAM Cell”, IEEE Transactions on Device and Material Reliability, pp. 14–17, 2003.
P. K. Saxena and Bhat, N. , “SEU reliability improvement due to source-side charge collection in the deep-submicron SRAM cell”, IEEE Transactions on Device and Materials Reliability, vol. 3, pp. 14-17, 2003.
M. P. Singh, Thakur, C. S. , Shalini, K. , Bhat, N. , and Shivashankar, S. A. , “Structural and Electrical Characterization of Erbium Oxide Films Grown on Si(100) by Low-pressure Metalorganic Chemical Vapour Deposition”, Applied Physics Letters, 2003.
M. P. Singh, Thakur, C. S. , Shalini, K. , Bhat, N. , and Shivashankar, S. A. , “Structural and Electrical Characterization of Erbium Oxide Films Grown on Si(100) by Low-pressure Metalorganic Chemical Vapour Deposition”, Applied Physics Letters, 2003.
M. P. Singh, Thakur, C. S. , Shalini, K. , Bhat, N. , and Shivashankar, S. A. , “Structural and Electrical Characterization of Erbium Oxide Films Grown on Si(100) by Low-pressure Metalorganic Chemical Vapour Deposition”, Applied Physics Letters, 2003.
2001
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , “Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study”, Phys. Rev. B, vol. 64, p. 155204, 2001.

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