Sorry, you need to enable JavaScript to visit this website.
office.cense@iisc.ac.in | +91-80-2293 3276/ +91-80-2293 3291 | Sitemap

Publications

Found 542 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Last Name is S  [Clear All Filters]
2004
M. P. Singh, Thakur, C. S. , Shalini, K. , Banerjee, S. , Bhat, N. , and Shivashankar, S. A. , Structural, Optical, and Electrical Characterization of Gadolinium Oxide Films Deposited by Low-pressure Metalorganic Chemical Vapour Deposition, Journal of Applied Physics, vol. 96, pp. 5631–5637, 2004.
M. P. Singh, Thakur, C. S. , Shalini, K. , Banerjee, S. , Bhat, N. , and Shivashankar, S. A. , Structural, Optical, and Electrical Characterization of Gadolinium Oxide Films Deposited by Low-pressure Metalorganic Chemical Vapour Deposition, Journal of Applied Physics, vol. 96, pp. 5631–5637, 2004.
M. P. Singh, Thakur, C. S. , Shalini, K. , Banerjee, S. , Bhat, N. , and Shivashankar, S. A. , Structural, Optical, and Electrical Characterization of Gadolinium Oxide Films Deposited by Low-pressure Metalorganic Chemical Vapour Deposition, Journal of Applied Physics, vol. 96, pp. 5631–5637, 2004.
2003
H. C. Srinivasaiah and Bhat, N. , Mixed Mode Simulation Approach to Characterize the Circuit Delay Sensitivity to Implant Dose Variations, IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems, vol. 22, pp. 742–747, 2003.
H. C. Srinivasaiah and Bhat, N. , Monte Carlo Analysis of the Implant Dose Sensitivity in 0.1 nm NMOSFET, Solid-State Electronics, vol. 47/8, pp. 1379–1383, 2003.
P. K. Saxena and Bhat, N. , Process technique for SEU reliability improvement of deep sub-micron SRAM cell, Solid-State Electronics, vol. 47, pp. 661–664, 2003.
P. K. Saxena and Bhat, N. , SEU Reliability Improvement Due to Source-Side Charge Collection in the Deep-Submicron SRAM Cell, IEEE Transactions on Device and Material Reliability, pp. 14–17, 2003.
P. K. Saxena and Bhat, N. , SEU reliability improvement due to source-side charge collection in the deep-submicron SRAM cell, IEEE Transactions on Device and Materials Reliability, vol. 3, pp. 14-17, 2003.
M. P. Singh, Thakur, C. S. , Shalini, K. , Bhat, N. , and Shivashankar, S. A. , Structural and Electrical Characterization of Erbium Oxide Films Grown on Si(100) by Low-pressure Metalorganic Chemical Vapour Deposition, Applied Physics Letters, 2003.
M. P. Singh, Thakur, C. S. , Shalini, K. , Bhat, N. , and Shivashankar, S. A. , Structural and Electrical Characterization of Erbium Oxide Films Grown on Si(100) by Low-pressure Metalorganic Chemical Vapour Deposition, Applied Physics Letters, 2003.
M. P. Singh, Thakur, C. S. , Shalini, K. , Bhat, N. , and Shivashankar, S. A. , Structural and Electrical Characterization of Erbium Oxide Films Grown on Si(100) by Low-pressure Metalorganic Chemical Vapour Deposition, Applied Physics Letters, 2003.
2001
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study, Phys. Rev. B, vol. 64, p. 155204, 2001.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study, Phys. Rev. B, vol. 64, p. 155204, 2001.
1999
N. Bhat, Wang, A. , and Saraswat, K. C. , Rapid thermal anneal of gate oxides for low thermal budget TFTs, IEEE Transactions on Electron Devices, p. 63, 1999.
1998
N. Bhat and Saraswat, K. C. , Characterization of border trap generation in rapid thermally annealed oxides deposited using silane chemistry, Journal of Applied Physics, p. 2722, 1998.
1997
N. Bhat, Cao, M. , and Saraswat, K. C. , Bias temperature instability in hydrogenated thin-film transistors, IEEE Transactions on Electron Devices, p. 1102, 1997.
1996
N. Bhat, Apte, P. P. , and Saraswat, K. C. , Charge trap generation in LPCVD oxides under high field stressing, IEEE Transactions on Electron Devices, p. 554, 1996.

Pages