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Publications

Found 316 results
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2014
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
A. N. Mallya and Ramamurthy, P. C. , Investigation of selective sensing of a diamine for aldehyde by experimental and simulation studies, Analyst, vol. 139, pp. 6456–6466, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , Bajaj, S. , and Rajan, S. , Lateral energy band engineering of Al2O3/III-nitride interfaces, in 72nd Device Research Conference, 2014, pp. 131-132.
S. Seethamraju, Rao, A. D. , Ramamurthy, P. C. , and Madras, G. , Layer-by-Layer Assembly of Nafion on Surlyn with Ultrahigh Water Vapor Barrier, Langmuir, vol. 30, pp. 14606–14611, 2014.
S. Seethamraju, Rao, A. D. , Ramamurthy, P. C. , and Madras, G. , Layer-by-Layer Assembly of Nafion on Surlyn with Ultrahigh Water Vapor Barrier, Langmuir, vol. 30, pp. 14606–14611, 2014.
S. Rammohan, Ramya, C. M. , S. Kumar, J. , Jain, A. , and Pratap, R. , Low frequency vibration energy harvesting using arrays of PVDF piezoelectric bimorphs, Journal of ISSS, vol. 3, pp. 18-27, 2014.
S. Rammohan, Ramya, C. M. , S. Kumar, J. , Jain, A. , and Pratap, R. , Low frequency vibration energy harvesting using arrays of PVDF piezoelectric bimorphs, Journal of ISSS, vol. 3, pp. 18-27, 2014.
T. Srinivasan, Mishra, P. , Jangir, S. K. , Raman, R. , Rao, D. V. Sridhar, Rawal, D. S. , and Muralidharan, R. , Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP), Infrared Physics & Technology, vol. 70, 2014.
T. Srinivasan, Mishra, P. , Jangir, S. K. , Raman, R. , Rao, D. V. Sridhar, Rawal, D. S. , and Muralidharan, R. , Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP), Infrared Physics & Technology, vol. 70, 2014.
T. Srinivasan, Mishra, P. , Jangir, S. K. , Raman, R. , Rao, D. V. Sridhar, Rawal, D. S. , and Muralidharan, R. , Molecular Beam Epitaxy growth and characterization of silicon – Doped InAs dot in a well quantum dot infrared photo detector (DWELL-QDIP), Infrared Physics & Technology, vol. 70, 2014.
M. Agrawal, Jain, A. , Rao, D. V. Sridhar, Pandeya, A. , Goyala, A. , Kumara, A. , Lambaa, S. , Mehta, B. R. , Muraleedharan, K. , and Muralidharan, R. , Nanoharvesting of GaN nanowires on Si 211 substrates by plasma-assisted molecular beam epitaxy, Journal of Crystal Growth, vol. 402, 2014.
M. Laskar, Nath, D. N. , Ma, L. , Lee, E. , Lee, C. H. , Kent, T. , Yang, Z. , Mishra, R. , Roldan, M. A. , Idrobo, J. - C. , Pantelides, S. T. , Pennycook, S. J. , Myers, R. , Wu, Y. , and Rajan, S. , p-type doping of MoS2 thin films using Nb, Applied Physics Letters, vol. 104, p. 092104, 2014.
M. Laskar, Nath, D. N. , Ma, L. , Lee, E. , Lee, C. H. , Kent, T. , Yang, Z. , Mishra, R. , Roldan, M. A. , Idrobo, J. - C. , Pantelides, S. T. , Pennycook, S. J. , Myers, R. , Wu, Y. , and Rajan, S. , p-type doping of MoS2 thin films using Nb, Applied Physics Letters, vol. 104, p. 092104, 2014.
A. Rao, Karalatti, S. , Thomas, T. , and Ramamurthy, P. C. , Self-assembled, aligned ZnOnanorod buffer layers for high current density, inverted organic photovoltaics, ACS Applied Materials & Interfaces, vol. 6, pp. 16792–16799, 2014.
A. Rao, Karalatti, S. , Thomas, T. , and Ramamurthy, P. C. , Self-assembled, aligned ZnOnanorod buffer layers for high current density, inverted organic photovoltaics, ACS Applied Materials & Interfaces, vol. 6, pp. 16792–16799, 2014.
J. Safioui, Leo, F. , Kuyken, B. , Gorza, S. , Selvaraja, S. K. , Baets, R. , Emplit, P. , Roelkens, G. , and Massar, S. , Supercontinuum generation in hydrogenated amorphous silicon waveguides at telecommunication wavelengths, Optics Express, vol. 22, pp. 3089–3097, 2014.
R. Muralidharan, Ramesh, V. , Mishra, P. , and Srinivasan, T. , Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy, Semiconductor Science and Technology, vol. 29, 2014.
R. B. Rao, Bhat, N. , and Sikdar, S. K. , Thick PECVD Germanium Films for MEMS Application. In Physics of Semiconductor Devices. Springer Verlag, 2014, pp. 469–471.
A. E. Viegas, Chatterjee, D. , Choudhury, T. H. , Raghavan, S. , and Bhat, N. , Thin film anodized titania nanotubes-based oxygen sensor, in Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on, 2014, pp. 1-4.
K. B. Bharadwaj, Pratap, R. , and Raghavan, S. , Transfer free suspended graphene devices on silicon using electrodeposited copper, Journal of Vacuum Science and Technology B, vol. 32, p. 010603, 2014.
2015
T. H. Choudhury and Raghavan, S. , Anodization of sputtered metallic films: The microstructural connection, Scripta Materialia, vol. 105, pp. 18–21, 2015.
A. Goyal, Kapoor, A. K. , Raman, R. , Dalal, S. , Mohan, P. , and Muralidharan, R. , Band gap bowing parameter in pseudomorphic AlxGa1-xN/GaN high electron mobility transistor structures, J. Appl. Phys., vol. 117, p. 225702, 2015.
Z. Yang, Nath, D. N. , Zhang, Y. , Khurgin, J. B. , and Rajan, S. , Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors, IEEE Electron Device Letters, vol. 36, pp. 436-438, 2015.
K. K. Khanum, S., S. B. , and Ramamurthy, P. C. , Design and morphology control of a thiophene derivative through electrospraying using various solvent, RSC Advances" volume = "5, pp. 60419–60425, 2015.
H. Chandrasekar, Singh, M. , Raghavan, S. , and Bhat, N. , Estimation of background carrier concentration in fully depleted GaN films, Semiconductor Science and Technology, vol. 30, p. 115018, 2015.

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