Journal Article
K. Lakshmi Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. ,
“High-performance HfO 2 back gated multilayer MoS 2 transistors”,
IEEE Electron Device Letters, vol. 37, pp. 797–800, 2016.
K. Lakshmi Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. ,
“High-performance HfO 2 back gated multilayer MoS 2 transistors”,
IEEE Electron Device Letters, vol. 37, pp. 797–800, 2016.
K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. ,
“High-Performance HfO2 Back Gated Multilayer MoS2 Transistors”,
IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. ,
“High-Performance HfO2 Back Gated Multilayer MoS2 Transistors”,
IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
S. Bhattacharjee, Vatsyayan, R. , Ganapathi, K. Lakshmi, Ravindra, P. , Mohan, S. , and Bhat, N. ,
“Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2”,
Advanced Electronic Materials, p. 1800863, 2019.
S. Bhattacharjee, Vatsyayan, R. , Ganapathi, K. Lakshmi, Ravindra, P. , Mohan, S. , and Bhat, N. ,
“Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2”,
Advanced Electronic Materials, p. 1800863, 2019.
C. S. Prajapati, Visser, D. , Anand, S. , and Bhat, N. ,
“Honeycomb type ZnO nanostructures for sensitive and selective CO detection”,
Sensors and Actuators B: Chemical, vol. 252, pp. 764–772, 2017.
B. P. Harish, Bhat, N. , and Patil, M. B. ,
“Hybrid-CV Modeling for Estimating the Variability in Dynamic Power”,
J. Low Power Electronics ASP, vol. 4, pp. 263–274, 2008.
R. Kumar Jha, Sakhuja, N. , Jakhar, S. , and Bhat, N. ,
“Hydrogen Sulfide Gas Sensing Capabilities of Solution Processed Vanadium Pentoxide Nanosheets”,
IEEE Transactions on Nanotechnology, vol. 18, pp. 932–939, 2019.
A. Khanna, Subramanian, A. Z. , Häyrinen, M. , Selvaraja, S. K. , Verheyen, P. , Van Thourhout, D. , Honkanen, S. , Lipsanen, H. , and Baets, R. ,
“Impact of ALD grown passivation layers on silicon nitride based integrated optics devices for very-near-infrared wavelengths”,
Optics Express, vol. 22, pp. 5684–5692, 2014.
K. Maitra and Bhat, N. ,
“Impact of Gate to Source/Drain Overlap Length on 80 nm CMOS Circuit Performance”,
IEEE Transactions on Electron Devices, pp. 409–414, 2004.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. ,
“Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111)”,
Journal of Applied Physics, vol. 127, p. 215705, 2020.
D. R. Nayak, Bhat, N. , Venkatapathi, M. , and Umapathy, S. ,
“Impact of ultrathin dielectric spacers on SERS: energy transfer between polarized charges and plasmons”,
Journal of Materials Chemistry C, vol. 5, pp. 2123–2129, 2017.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. ,
“Integrated X-Band Inductor With a Nanoferrite Film Core”,
IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. ,
“Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”,
ECS Transactions, vol. 80, pp. 101–107, 2017.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. ,
“Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”,
ECS Transactions, vol. 80, pp. 101–107, 2017.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. ,
“Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”,
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. ,
“Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”,
IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. ,
“Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”,
IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. ,
“Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”,
IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.