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Publications

Found 363 results
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Journal Article
C. Shekhar Prajapati and Bhat, N. , Highly Sensitive CO Sensor Based on Thickness-Selective ZnO Thin Film: Device Fabrication and Packaging, Crystal Research and Technology, vol. 54, p. 1800241, 2019.
K. Lakshmi Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , High-performance HfO 2 back gated multilayer MoS 2 transistors, IEEE Electron Device Letters, vol. 37, pp. 797–800, 2016.
K. Lakshmi Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , High-performance HfO 2 back gated multilayer MoS 2 transistors, IEEE Electron Device Letters, vol. 37, pp. 797–800, 2016.
K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , High-Performance HfO2 Back Gated Multilayer MoS2 Transistors, IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
K. L. Ganapathi, Bhattacharjee, S. , Mohan, S. , and Bhat, N. , High-Performance HfO2 Back Gated Multilayer MoS2 Transistors, IEEE Electron Device Letters, vol. 37, pp. 797-800, 2016.
S. Bhattacharjee, Vatsyayan, R. , Ganapathi, K. Lakshmi, Ravindra, P. , Mohan, S. , and Bhat, N. , Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2, Advanced Electronic Materials, p. 1800863, 2019.
S. Bhattacharjee, Vatsyayan, R. , Ganapathi, K. Lakshmi, Ravindra, P. , Mohan, S. , and Bhat, N. , Hole Injection and Rectifying Heterojunction Photodiodes through Vacancy Engineering in MoS2, Advanced Electronic Materials, p. 1800863, 2019.
C. S. Prajapati, Visser, D. , Anand, S. , and Bhat, N. , Honeycomb type ZnO nanostructures for sensitive and selective CO detection, Sensors and Actuators B: Chemical, vol. 252, pp. 764–772, 2017.
B. P. Harish, Bhat, N. , and Patil, M. B. , Hybrid-CV Modeling for Estimating the Variability in Dynamic Power, J. Low Power Electronics ASP, vol. 4, pp. 263–274, 2008.
R. Kumar Jha, Sakhuja, N. , Jakhar, S. , and Bhat, N. , Hydrogen Sulfide Gas Sensing Capabilities of Solution Processed Vanadium Pentoxide Nanosheets, IEEE Transactions on Nanotechnology, vol. 18, pp. 932–939, 2019.
A. Khanna, Subramanian, A. Z. , Häyrinen, M. , Selvaraja, S. K. , Verheyen, P. , Van Thourhout, D. , Honkanen, S. , Lipsanen, H. , and Baets, R. , Impact of ALD grown passivation layers on silicon nitride based integrated optics devices for very-near-infrared wavelengths, Optics Express, vol. 22, pp. 5684–5692, 2014.
A. Sankar Medury, Bhat, K. N. , and Bhat, N. , Impact of carrier quantum confinement on the short channel effects of double-gate silicon-on-insulator FINFETs, Microelectronics Journal, vol. 55, pp. 143–151, 2016.
A. Sankar Medury, Bhat, K. N. , and Bhat, N. , Impact of carrier quantum confinement on the short channel effects of double-gate silicon-on-insulator FINFETs, Microelectronics Journal, vol. 55, pp. 143–151, 2016.
K. Maitra and Bhat, N. , Impact of Gate to Source/Drain Overlap Length on 80 nm CMOS Circuit Performance, IEEE Transactions on Electron Devices, pp. 409–414, 2004.
S. Rathkanthiwar, Kalra, A. , Remesh, N. , Bardhan, A. , Muralidharan, R. , Nath, D. N. , and Raghavan, S. , Impact of pits formed in the AlN nucleation layer on buffer leakage in GaN/AlGaN high electron mobility transistor structures on Si (111), Journal of Applied Physics, vol. 127, p. 215705, 2020.
D. R. Nayak, Bhat, N. , Venkatapathi, M. , and Umapathy, S. , Impact of ultrathin dielectric spacers on SERS: energy transfer between polarized charges and plasmons, Journal of Materials Chemistry C, vol. 5, pp. 2123–2129, 2017.
R. Soman, Raghavan, S. , and Bhat, N. , An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate, Semiconductor Science and Technology, vol. 34, p. 125011, 2019.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , Integrated X-Band Inductor With a Nanoferrite Film Core, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs, ECS Transactions, vol. 80, pp. 101–107, 2017.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs, ECS Transactions, vol. 80, pp. 101–107, 2017.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. , Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
N. Bhat and Vasi, J. , Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors, IEEE Transactions on Nuclear Science, p. 2230, 1992.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.

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