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Publications

Found 57 results
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Journal Article
S. Ghatak, Banerjee, A. , and Sikdar, S. K. , “Ischaemic concentrations of lactate increase TREK 1 channel activity by interacting with a single histidine residue in the carboxy terminal domain”, Journal of Physiology (Lond.), vol. 594, pp. 59–81, 2016.
D. Visser, Ye, Z. , Prajapati, C. S. , Bhat, N. , and Anand, S. , “Investigations of Sol-Gel ZnO Films Nanostructured by Reactive Ion Beam Etching for Broadband Anti-Reflection”, ECS Journal of Solid State Science and Technology, vol. 6, pp. P653–P659, 2017.
D. Roy, Sreenivasulu, K. V. , and Kumar, P. S. A. , “Investigation on non-exchange spring behaviour and exchange spring behaviour: A First Order Reversal Curve Analysis”, Appl. Phys. Lett., vol. 103, p. 222406, 2013.
K. Sandeep Sharma, Jen, H. - T. , Li, S. - S. , and Pillai, G. , “Investigation of support transducer enabled higher-order radial bulk mode MEMS resonator and low phase noise oscillator”, Journal of Micromechanics and Microengineering, vol. 32, p. 084004, 2022.
A. N. Mallya and Ramamurthy, P. C. , “Investigation of selective sensing of a diamine for aldehyde by experimental and simulation studies”, Analyst, vol. 139, pp. 6456–6466, 2014.
P. Lekshmy Venugopalan and Ghosh, A. , “Investigating the Dynamics of the Magnetic Micromotors in Human Blood”, Langmuir, 2020.
P. Deshpande, Suri, P. , Jeong, H. - H. , Fischer, P. , Ghosh, A. , and Ghosh, A. , “Investigating photoresponsivity of graphene-silver hybrid nanomaterials in the ultraviolet”, The Journal of Chemical Physics, vol. 152, p. 044709, 2020.
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. , “Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT”, Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
S. Kumar, Abraham, E. , Kumar, P. , and Pratap, R. , “Introducing Water Electrolithography”, ACS Omega, 2021.
S. Raghavan and Redwing, J. M. , “Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”, Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
K. Majumdar, V.R., K. , Murali, M. , Bhat, N. , and Lin, Y. - M. , “Intrinsic limits of subthreshold slope in biased bilayer graphene transistor”, Applied Physics Letters, vol. 96, p. 123504, 2010.
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. , “Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”, Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. , “Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
A. Pandey and Selvaraja, S. Kumar, “Internally-loaded ring resonator configuration for optical filter applications”, CSI transactions on ICT, vol. 5, pp. 135–141, 2017.
N. Bhat and Vasi, J. , “Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors”, IEEE Transactions on Nuclear Science, p. 2230, 1992.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”, Solid-State Electronics, vol. 137, pp. 117–122, 2017.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. , “Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , “Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”, ECS Transactions, vol. 80, pp. 101–107, 2017.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for enhancement-mode GaN MISHEMT”, IEEE Electron Device Letters, vol. 99, 2014.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , “Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”, Applied Physics Letters, vol. 102, p. 072105, 2013.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , “Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study”, Phys. Rev. B, vol. 64, p. 155204, 2001.
N. Mohan, , , Soman, R. , and Raghavan, S. , “Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes”, Journal of Applied Physics, vol. 118, p. 135302, 2015.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , “Integrated X-Band Inductor With a Nanoferrite Film Core”, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.

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