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Publications

Found 794 results
Author [ Title(Asc)] Type Year
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I
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , Interface Charge Engineering for enhancement-mode GaN MISHEMT, IEEE Electron Device Letters, vol. 99, 2014.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces, Applied Physics Letters, vol. 102, p. 072105, 2013.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study, Phys. Rev. B, vol. 64, p. 155204, 2001.
M. Ramanathan and Pratap, R. , Integration of a Compliant Thermal Actuator for Unlatching in a Mems Latch Accelerometer, in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019.
N. Mohan, , , Soman, R. , and Raghavan, S. , Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes, Journal of Applied Physics, vol. 118, p. 135302, 2015.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , Integrated X-Band Inductor With a Nanoferrite Film Core, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
T. A. Chowdary and Banerjee, G. , An integrated X-band FMCW radar transceiver in 130-nm CMOS technology, in 2015 IEEE MTT-S International Microwave and RF Conference (IMaRC), 2015, pp. 151-154.
J. S. Gaggatur and Banerjee, G. , Integrated temperature sensor for reconfigurable radio frequency synthesizer, in Electronics, Computing and Communication Technologies (CONECCT), 2015 IEEE International Conference on, 2015, pp. 1-6.
N. Bhat, Jayaraman, B. , Pratap, R. , Bagga, S. , and Mohan, S. , Integrated CMOS gas sensors, in Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on, 2009, pp. 1-5.
S. Raghavan and Redwing, J. M. , In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
G. R. Prashanth, Murali, P. , Varma, M. M. , and Bhat, N. , In-situ impedance spectroscopy of layer-by-layer self-assembly of polyelectrolytes, in Emerging Electronics (ICEE), 2012 International Conference on, 2012, pp. 1-4.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , Insights on defect-mediated heterogeneous nucleation of graphene on copper, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
J. B. George, Abraham, G. M. , Singh, K. , Ankolekar, S. M. , Amrutur, B. , and Sikdar, S. K. , Input coding for neuro-electronic hybrid systems, Biosystems, vol. 126, pp. 1-11, 2014.
J. Baby George, Amrutur, B. , and Sikdar, S. , Input coding for neuro-electronic hybrid systems, in 4th IEEE EMBS Conference on Neural Engineering, 2013.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
S. Chaurasia, Chatterjee, A. , Selvaraja, S. , and Avasthi, S. , Infrared (IR) photoresistors based on recrystallized amorphous germanium films on silicon using liquid phase epitaxy, in Optical Sensing and Detection V, 2018.
A. Kumar Pandey, Pratap, R. , and Chau, F. Siong, Influence of Boundary Conditions on the Dynamic Characteristics of Squeeze Films in MEMS Devices, IEEE/ASME Journal of MEMS, vol. 16, pp. 893–903, 2007.
V. Mishra, Ananthasuresh, G. K. , Bhat, N. , Nageswari, K. , Contractor, A. Q. , Kottantharayil, A. , Jamadagni, H. S. , Mohan, S. , Murthy, T. , Pratap, R. , Pinto, R. , Rao, V. R. , Vasi, J. M. , Shivashankar, S. A. , Venkataraman, V. , and Vinoy, K. J. , Indian Nanoelectronics Users Program: An Outreach Vehicle to Expedite Nanoelectronics Research in India, in 2010 18th Biennial University/Government/Industry Micro/Nano Symposium, 2010, pp. 1-5.
A. Dash, Mere, V. , Selvaraja, S. K. , and Naik, A. K. , Independently reconfigurable internal loss and resonance-shift in an interferometer-embedded optical cavity, arXiv preprint arXiv:2106.12899, 2021.
P. Mandal, Chopra, V. , and Ghosh, A. , Independent Direction Control of Magnetic Nanomotors, ACS Nano, vol. 9, 2015.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. , Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening, Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
R. Soman, Raghavan, S. , and Bhat, N. , An in situ monitored and controlled etch process to suppress Mg memory effects in MOCVD GaN growth on Si substrate, Semiconductor Science and Technology, vol. 34, p. 125011, 2019.
S. Khan and Ananthasuresh, G. K. , Improving the Sensitivity and Bandwidth of In-Plane Capacitive Microaccelerometers Using Compliant Mechanical Amplifiers, Journal of Microelectromechanical Systems, vol. 23, pp. 871-887, 2014.

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