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Publications

Found 266 results
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2012
B. W. Wang, Dumon, P. , Selvaraja, S. K. , Teng, J. , Pathak, S. , Han, X. , JinyanWang, X. Jian, Zhao, M. , Baets, R. , and Morthier, G. , “Athermal AWGs in SOI by overlaying a polymer cladding on narrowed arrayed waveguides”, Applied Optics, vol. 51, pp. 1251–1256, 2012.
D. S. Rawal, Malik, H. K. , Agarwal, V. R. , Kapoor, A. Kumar, Sehgal, B. K. , and Muralidharan, R. , “BCl3/Cl2-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask”, IEEE Transactions on Plasma Science, vol. 40, p. 2211, 2012.
D. S. Rawal, Malik, H. K. , Agarwal, V. R. , Kapoor, A. Kumar, Sehgal, B. K. , and Muralidharan, R. , “BCl3/Cl2-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask”, IEEE Transactions on Plasma Science, vol. 40, p. 2211, 2012.
K. S. Abedin, Taunay, T. F. , Fishteyn, M. , DiGiovanni, D. J. , Supradeepa, V. R. , Fini, J. M. , Yan, M. F. , Zhu, B. , Monberg, E. M. , and Dimarcello, F. V. , “Cladding-pumped erbium-doped multicore fiber amplifier”, Optics Express, vol. 20, no. 18, pp. 20191–20200, 2012.
J. K. Reddy., Malhi, C. K. , Pratap, R. , and Bhat, N. , “Coupled numerical analysis of Suspended gate field effect transistor (SGFET)”, in Physics and Technology of Sensors (ISPTS), 2012 1st International Symposium on, 2012, pp. 141-144.
A. Medury, Mercha, K. , Ritzenthaler, R. , De Keersgieter, A. , Chiarella, T. , Collaert, N. , Bhat, N. , and Bhat, K. N. , “Device scaling model for bulk FinFETs”, in 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), 2012, pp. 113-116.
A. Medury, Mercha, K. , Ritzenthaler, R. , De Keersgieter, A. , Chiarella, T. , Collaert, N. , Bhat, N. , and Bhat, K. N. , “Device scaling model for bulk FinFETs”, in 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), 2012, pp. 113-116.
S. M. Mohanasundaram, Pratap, R. , and Ghosh, A. , “Electromigration: A Unique Tool for Microstructure Engineering in Metal Films”, International Journal of Applied Physics and Mathematics, vol. 2, pp. 2426-2431, 2012.
M. K Bhat, Mandal, S. , Pathak, S. , G Saravanan, S. , Sridhar, C. , Badnikar, S. L. , Vyas, H. P. , Muralidharan, R. , Jain, M. K. , and Subrahmanyam, A. , “Gate recess structure engineering using silicon-nitride-assisted process for increased breakdown voltage in pseudomorphic HEMTs”, Semicond. Sci. Technol, vol. 27, 2012.
M. K Bhat, Mandal, S. , Pathak, S. , G Saravanan, S. , Sridhar, C. , Badnikar, S. L. , Vyas, H. P. , Muralidharan, R. , Jain, M. K. , and Subrahmanyam, A. , “Gate recess structure engineering using silicon-nitride-assisted process for increased breakdown voltage in pseudomorphic HEMTs”, Semicond. Sci. Technol, vol. 27, 2012.
G. R. Prashanth, Murali, P. , Varma, M. M. , and Bhat, N. , “In-situ impedance spectroscopy of layer-by-layer self-assembly of polyelectrolytes”, in Emerging Electronics (ICEE), 2012 International Conference on, 2012, pp. 1-4.
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. , “Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT”, Semiconductor Science and Technology, vol. 28, p. 015026, 2012.
V. Mishra, Raghavan, S. , Bhat, N. , and Pratap, R. , “Micro and Nano Characterization Facility: Operations Methodology and Technical Management”, in 2012 19th Biennial University/Government/Industry, Micro/Nano Symposium (UGIM), 2012, pp. 1-1.
T. U. M. S. Murthy, Vijayaraghavan, M. N. , Savitha, P. , Hegde, G. , Raghavan, S. , Kumar, P. S. A. , Pratap, R. , and Bhat, N. , “National Nanofabrication Centre at IISc Bangalore: A Chronicle of Design, Construction and Management of Cleanroom in Indian Context”, in 2012 19th Biennial University/Government/Industry, Micro/Nano Symposium (UGIM), 2012, pp. 1-1.
A. Ghosh and Maris, H. J. , “Optical Properties of 1P State Electron Bubbles in Liquid Helium-4”, Journal of Physics: Conference Series, vol. 400, p. 012011, 2012.
K. L. Ganapathi, Bhat, N. , and Mohan, S. , “Optimization of oxygen flow rate for e-beam evaporated HfO2 thin films”, in Emerging Electronics (ICEE), 2012 International Conference on, 2012, pp. 1-4.
D. N. Nath, Park, P. Sung, Esposto, M. , Brown, D. , Keller, S. , Mishra, U. K. , and Rajan, S. , “Polarization Engineered 1-dimensional Electron Gas Arrays”, Journal of Applied Physics, vol. 111, p. 043715, 2012.
J. W. Nicholson, Fini, J. M. , DeSantolo, A. M. , Liu, X. , Feder, K. , Westbrook, P. S. , Supradeepa, V. R. , Monberg, E. , DiMarcello, F. , Ortiz, R. , Headley, C. , and DiGiovanni, D. J. , “Scaling the effective area of higher-order-mode erbium-doped fiber amplifiers”, Optics Express, vol. 20, no. 22, pp. 24575-24584, 2012.
R. M, B, A. , KV, S. , and Sikdar, S. K. , “A study of epileptogenic network structures in rat hippocampal cultures using first spike latencies during synchronization events”, Physical Biol, 2012.
B. Chakraborty, Bera, A. , Muthu, D. V. S. , Bhowmick, S. , Waghmare, U. V. , and Sood, A. K. , “Symmetry-dependent phonon renormalization in monolayer MoS2 transistor”, Phys. Rev. B (Rapid Communications)., vol. 85. p. 161403, 2012.
S. M. Mohanasundaram, Pratap, R. , and Ghosh, A. , “Tuning the sensitivity of a metal-based piezoresistive sensor using electromigration”, Journal of Microelectromechanical Systems, vol. 21, pp. 1276-1278, 2012.
S. M. Mohanasundaram, Pratap, R. , and Ghosh, A. , “Two orders of magnitude increase in metal piezoresistor sensitivity through nanoscale inhomogenization”, Journal of Applied Physics, vol. 112, pp. 084332-9, 2012.
D. Venkateswarlu, Mohanan, P. V. , Joshi, R. S. , and Kumar, P. S. A. , “Understanding the Magnetization Reversal in Six-Fold Anisotropic Hexagonal Networks”, IEEE Transactions on Magnetics, vol. 48, pp. 2793-2796, 2012.
2011
D. S. Rawal, Sehgal, B. K. , Muralidharan, R. , and Malik, H. K. , “Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl2/BCl3-Based Inductively Coupled Plasma”, Plasma Science and Technology, vol. 13, 2011.
D. S. Rawal, Sehgal, B. K. , Muralidharan, R. , and Malik, H. K. , “Experimental Study of the Influence of Process Pressure and Gas Composition on GaAs Etching Characteristics in Cl2/BCl3-Based Inductively Coupled Plasma”, Plasma Science and Technology, vol. 13, 2011.

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