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Publications

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A. Kumar Pandey, Pratap, R. , and Chau, F. Siong, “Influence of Boundary Conditions on the Dynamic Characteristics of Squeeze Films in MEMS Devices”, IEEE/ASME Journal of MEMS, vol. 16, pp. 893–903, 2007.
S. Chaurasia, Chatterjee, A. , Selvaraja, S. , and Avasthi, S. , “Infrared (IR) photoresistors based on recrystallized amorphous germanium films on silicon using liquid phase epitaxy”, in Optical Sensing and Detection V, 2018.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. , “Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics”, Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
J. B. George, Abraham, G. M. , Singh, K. , Ankolekar, S. M. , Amrutur, B. , and Sikdar, S. K. , “Input coding for neuro-electronic hybrid systems”, Biosystems, vol. 126, pp. 1-11, 2014.
J. Baby George, Amrutur, B. , and Sikdar, S. , “Input coding for neuro-electronic hybrid systems”, in 4th IEEE EMBS Conference on Neural Engineering, 2013.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. , “Insights on defect-mediated heterogeneous nucleation of graphene on copper”, The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
G. R. Prashanth, Murali, P. , Varma, M. M. , and Bhat, N. , “In-situ impedance spectroscopy of layer-by-layer self-assembly of polyelectrolytes”, in Emerging Electronics (ICEE), 2012 International Conference on, 2012, pp. 1-4.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. , “In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”, Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
S. Raghavan and Redwing, J. M. , “In-situ stress measurements during the MOCVD growth of AlN buffer layers on (111) Si substrates”, Journal of Crystal Growth, vol. 261, pp. 294-300, 2004.
N. Bhat, Jayaraman, B. , Pratap, R. , Bagga, S. , and Mohan, S. , “Integrated CMOS gas sensors”, in Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on, 2009, pp. 1-5.
J. S. Gaggatur and Banerjee, G. , “Integrated temperature sensor for reconfigurable radio frequency synthesizer”, in Electronics, Computing and Communication Technologies (CONECCT), 2015 IEEE International Conference on, 2015, pp. 1-6.
T. A. Chowdary and Banerjee, G. , “An integrated X-band FMCW radar transceiver in 130-nm CMOS technology”, in 2015 IEEE MTT-S International Microwave and RF Conference (IMaRC), 2015, pp. 151-154.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. , “Integrated X-Band Inductor With a Nanoferrite Film Core”, IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
N. Mohan, , , Soman, R. , and Raghavan, S. , “Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes”, Journal of Applied Physics, vol. 118, p. 135302, 2015.
M. Ramanathan and Pratap, R. , “Integration of a Compliant Thermal Actuator for Unlatching in a Mems Latch Accelerometer”, in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII), 2019.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. , “Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study”, Phys. Rev. B, vol. 64, p. 155204, 2001.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. , “Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”, Applied Physics Letters, vol. 102, p. 072105, 2013.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for enhancement-mode GaN MISHEMT”, IEEE Electron Device Letters, vol. 99, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. , “Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”, IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. , “Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”, ECS Transactions, vol. 80, pp. 101–107, 2017.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. , “Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. , “Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”, Solid-State Electronics, vol. 137, pp. 117–122, 2017.
N. Bhat and Vasi, J. , “Interface-state generation under radiation and high field stressing in reoxidized nitrided oxide MOS capacitors”, IEEE Transactions on Nuclear Science, p. 2230, 1992.
A. Pandey and Selvaraja, S. Kumar, “Internally-loaded ring resonator configuration for optical filter applications”, CSI transactions on ICT, vol. 5, pp. 135–141, 2017.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. , “Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”, IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.

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