Journal Article
A. Kumar Pandey, Pratap, R. , and Chau, F. Siong,
“Influence of Boundary Conditions on the Dynamic Characteristics of Squeeze Films in MEMS Devices”,
IEEE/ASME Journal of MEMS, vol. 16, pp. 893–903, 2007.
T. K. Nayak, Harinath, S. , Nama, S. , Somasundaram, K. , and Sikdar, S. K. ,
“Inhibition of human two-pore domain K+ channel TREK1 by local anesthetic lidocaine: negative cooperativity and half-of-the-sites saturation kinetics”,
Mol. Pharmacol., vol. 76, pp. 903–917, 2009.
J. B. George, Abraham, G. M. , Singh, K. , Ankolekar, S. M. , Amrutur, B. , and Sikdar, S. K. ,
“Input coding for neuro-electronic hybrid systems”,
Biosystems, vol. 126, pp. 1-11, 2014.
P. Ghosh, Kumar, S. , Ramalingam, G. , Kochat, V. , Radhakrishnan, M. , Dhar, S. , Suwas, S. , Ghosh, A. , Ravishankar, N. , and Raghavan, S. ,
“Insights on defect-mediated heterogeneous nucleation of graphene on copper”,
The Journal of Physical Chemistry C, vol. 119, pp. 2513–2522, 2015.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. ,
“In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”,
Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
R. Sai, Kulkarni, S. D. , Yamaguchi, M. , Bhat, N. , and Shivashankar, S. A. ,
“Integrated X-Band Inductor With a Nanoferrite Film Core”,
IEEE Magnetics Letters, vol. 8, pp. 1–4, 2017.
N. Mohan, , , Soman, R. , and Raghavan, S. ,
“Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes”,
Journal of Applied Physics, vol. 118, p. 135302, 2015.
E. J. W. List, Kim, C. - H. , Naik, A. , Scherf, U. , Leising, G. , Graupner, W. , and Shinar, J. ,
“Interaction of singlet excitons with polarons in wide band-gap organic semiconductors: A quantitative study”,
Phys. Rev. B, vol. 64, p. 155204, 2001.
T. - H. Hung, Krishnamoorthy, S. , Esposto, M. , Nath, D. N. , Park, P. Sung, and Rajan, S. ,
“Interface Charge Engineering at Atomic Layer Deposited (ALD) dielectric/III-Nitride Interfaces”,
Applied Physics Letters, vol. 102, p. 072105, 2013.
T. - H. Hung, Park, P. Sung, Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. ,
“Interface Charge Engineering for enhancement-mode GaN MISHEMT”,
IEEE Electron Device Letters, vol. 99, 2014.
T. H. Hung, Park, P. S. , Krishnamoorthy, S. , Nath, D. N. , and Rajan, S. ,
“Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs”,
IEEE Electron Device Letters, vol. 35, pp. 312-314, 2014.
S. Bhattacharjee, Ganapathi, K. L. , Mohan, S. , and Bhat, N. ,
“Interface Engineering of High-k Dielectrics and Metal Contacts for High Performance Top-Gated MoS2 FETs”,
ECS Transactions, vol. 80, pp. 101–107, 2017.
L. Ganapathi Kolla, Ding, Y. , Misra, D. , and Bhat, N. ,
“Interface states reduction in atomic layer deposited TiN/ZrO2/Al2O3/Ge gate stacks”,
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol. 36, p. 021201, 2018.
S. Kumar, Remesh, N. , Dolmanan, S. B. , Tripathy, S. , Raghavan, S. , Muralidharan, R. , and Nath, D. N. ,
“Interface traps at Al2O3/InAlN/GaN MOS-HEMT-on-200 mm Si”,
Solid-State Electronics, vol. 137, pp. 117–122, 2017.
A. Pandey and Selvaraja, S. Kumar,
“Internally-loaded ring resonator configuration for optical filter applications”,
CSI transactions on ICT, vol. 5, pp. 135–141, 2017.
S. Bhattacharjee, Ganapathi, K. Lakshmi, Nath, D. N. , and Bhat, N. ,
“Intrinsic limit for contact resistance in exfoliated multilayered MoS 2 FET”,
IEEE Electron Device Letters, vol. 37, pp. 119–122, 2016.
S. Bhattacharjee, Ganapathi, K. L. , Nath, D. N. , and Bhat, N. ,
“Intrinsic Limit for Contact Resistance in Exfoliated Multilayered MoS2 FET”,
IEEE Electron Device Letters, vol. 37, pp. 119-122, 2016.
K. B Bharadwaj, Chandrasekar, H. , Nath, D. , Pratap, R. , and Raghavan, S. ,
“Intrinsic limits of channel transport hysteresis in graphene-SiO2 interface and its dependence on graphene defect density”,
Journal of Physics D: Applied Physics, vol. 49, p. 265301, 2016.
K. Majumdar, V.R., K. , Murali, M. , Bhat, N. , and Lin, Y. - M. ,
“Intrinsic limits of subthreshold slope in biased bilayer graphene transistor”,
Applied Physics Letters, vol. 96, p. 123504, 2010.
S. Raghavan and Redwing, J. M. ,
“Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”,
Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
S. Kumar, Abraham, E. , Kumar, P. , and Pratap, R. ,
“Introducing Water Electrolithography”,
ACS Omega, 2021.
J. K. Kaushik, Balakrishnan, V. R. , Panwar, B. S. , and Muralidharan, R. ,
“Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT”,
Semiconductor Science and Technology, vol. 28, p. 015026, 2012.