S. Raghavan, Wang, H. , Porter, W. G. , Dinwiddie, R. B. , Vassen, R. , and Mayo, M. J. ,
“20 mol % Y(Ta/Nb)O4 Doped Zirconia Thermal Barrier Coatings”,
Journal of The American Ceramic Society, vol. 87, pp. 431-437, 2004.
A. Gupta and Bhat, N. ,
“Back-Gate Effect to Generate Derivative of Neuron Activation Function”,
Analog Integrated Circuits and Signal Processing, vol. 41, pp. 89–92, 2004.
A. Jain, Raghavan, S. , and Redwing, J. M. ,
“Evolution of Surface Morphology and Film Stress during MOCVD growth of InN on Sapphire Substrates”,
Journal of Crystal Growth, vol. 269, pp. 128–133, 2004.
A. Pogrebnyakov, Redwing, J. M. , Raghavan, S. , Vaithyanathan, V. , Schlom, D. G. , Xu, S. Y. , Li, Q. , Tenne, D. A. , Soukiassian, A. , Xi, X. X. , Johannes, M. D. , Kasinathan, D. , Pickett, W. E. , Wu, J. S. , and Spence, J. C. H. ,
“Increasing Superconducting Transition Temperature in MGB2 by Strain Induced Bond-Stretching Mode Softening”,
Physical Review Letters, vol. 93, pp. 147006–1–4., 2004.
J. D. Acord, Raghavan, S. , Snyder, D. W. , and Redwing, J. M. ,
“In-situ Stress Measurements During MOCVD Growth of High Al-content AlGaN on SiC”,
Journal of Crystal Growth, vol. 272, pp. 65–71, 2004.
S. Raghavan and Redwing, J. M. ,
“Intrinsic Stresses in AlN layers grown by MOCVD on (0001) sapphire and (111) Si substrates”,
Journal of Applied Physics, vol. 96, pp. 2995–3003, 2004.
M. P. Singh, Thakur, C. S. , Shalini, K. , Banerjee, S. , Bhat, N. , and Shivashankar, S. A. ,
“Structural, Optical, and Electrical Characterization of Gadolinium Oxide Films Deposited by Low-pressure Metalorganic Chemical Vapour Deposition”,
Journal of Applied Physics, vol. 96, pp. 5631–5637, 2004.